Featured Model

Your present location > Home page > Featured Model

IPP60R280C6-VB Product details

Product introduction:

:**
IPP60R280C6-VB is a high-performance single N-channel MOSFET based on Super Junction Multi-EPI technology with extremely low on-resistance (RDS(ON)) and high voltage tolerance. Its 650V drain-source voltage (VDS) makes it ideal for high-voltage applications, while the ±30V gate-source voltage (VGS) provides strong gate drive capability. In addition, the 160mΩ on-resistance and 20A maximum drain current (ID) enable it to efficiently transmit current and reduce power losses, making it ideal for applications requiring efficient conversion and switching performance.

**

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
:**
- **Package type**: TO220
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: Superjunction multi-epitaxial (SJ_Multi-EPI)
- **Operating temperature range**: -55°C to 150°C
- **Switching frequency**: Suitable for medium and high frequency applications

**

Domain and module applications:

Examples: **

1. **Power Management Module**: The IPP60R280C6-VB is ideal for high-efficiency switch mode power supply (SMPS) applications such as industrial and consumer power adapters, power inverters, etc. Due to its high voltage tolerance and low conduction losses, it can significantly improve system efficiency and reduce heat loss in these modules.

2. **Lighting Driver Module**: This type of MOSFET can be applied to the control circuits of LED lighting drivers and HID (high-intensity discharge) lamps. Its high switching speed and low power loss characteristics enable it to provide efficient power conversion in these scenarios.

3. **Motor Control**: The high voltage and high current capabilities of the IPP60R280C6-VB make it suitable for use in high-voltage DC motor drives in motor controllers, motor control modules for power tools and household appliances.

4. **Solar Inverter**: This MOSFET is suitable for inverters in solar photovoltaic systems due to its good switching performance and high efficiency. It can provide high efficiency and reliability in high-power and high-frequency environments.

Through its diverse technical advantages, IPP60R280C6-VB is also widely used in industrial automation, smart grid and renewable energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat