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IPP60R199CP-VB Product details

Product introduction:

1. IPP60R199CP-VB Product Introduction
IPP60R199CP-VB is an N-channel power MOSFET packaged in TO-220, using the multi-epitaxial (Multi-EPI) process in super junction (SJ) technology. The device has high voltage resistance and a maximum drain-source voltage (VDS) of up to 650V, making it suitable for high-voltage applications. Its on-state resistance (RDS(ON)) is low, at 160mΩ at VGS=10V, and it can provide higher current handling capabilities with a maximum drain current (ID) of 20A, making it suitable for high-efficiency switching power supplies (SMPS) and power conversion circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. IPP60R199CP-VB Detailed parameter description
- **Package type**: TO-220
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Power consumption**: Linear power consumption needs to be calculated based on the design environment
- **Operating temperature range**: The standard operating temperature range is wide, and the specific value depends on the application
- **Technology**: Super Junction (SJ) Multi-EPI

Domain and module applications:

III. IPP60R199CP-VB Application Fields and Modules
1. **Switching Power Supply (SMPS)**: IPP60R199CP-VB is very suitable for medium and high power switching power supply design due to its high withstand voltage and low on-resistance. In the main switch of the power converter, it can achieve higher efficiency, reduce power consumption and heat generation.

2. **Photovoltaic Inverter**: The high voltage characteristics and fast switching speed of this model of MOSFET make it an ideal choice for DC converters and inverter modules in photovoltaic inverters. It can handle high voltages and high currents in the inverter to ensure stable operation of the system.

3. **Motor Drive**: In industrial applications, motor drives need to handle high voltage and high current working environments. The 650V withstand voltage of IPP60R199CP-VB can be safely used in various industrial motor drive modules, especially in scenarios that require high efficiency and stable operation.

4. **Power Management System**: IPP60R199CP-VB can be used in various power management system modules that require high efficiency and high voltage tolerance, such as uninterruptible power supply (UPS) and battery management system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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