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IPP60R190E6-VB Product details

Product introduction:

1. IPP60R190E6-VB Product Introduction

IPP60R190E6-VB is a single-channel N-type MOSFET in TO220 package, mainly used in high-voltage applications. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and can operate stably at higher voltages. The device has a turn-on voltage of 3.5V (Vth), and when VGS is 10V, its on-resistance (RDS(ON)) is 160mΩ, with low conduction loss. In addition, the product can carry a current of 20A and uses Super Junction multiple EPI technology, which gives it better conduction efficiency and thermal management capabilities, making it suitable for high-efficiency application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. Detailed parameter description of IPP60R190E6-VB

1. **Package type**: TO220
2. **Configuration**: Single channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 20A
8. **Technology type**: Super Junction Multi-EPI technology
9. **Operating temperature range**: -55°C ~ 150°C
10. **Thermal resistance**: Typical value 1.1°C/W (junction to case)
11. **Power dissipation**: Typical value 80W
12. **Package size**: TO220 form factor, suitable for through-hole soldering or heat sink mounting

Domain and module applications:

III. Applications and Module Examples

1. **Switching Power Supply (SMPS)**: The IPP60R190E6-VB is suitable for high-efficiency switching mode power supply design, especially in high-voltage AC-DC conversion. Its high withstand voltage and low conduction loss enable it to handle high-power density applications such as server power supplies and industrial power supplies.

2. **Inverter and Frequency Converter**: This MOSFET can be used in solar inverters, wind power generation equipment, and frequency converter modules in industrial motor control. The low conduction loss and efficient thermal management capabilities brought by super junction technology make it suitable for high-power devices that need to work stably for a long time.

3. **Electric Vehicle (EV) Charger**: The high withstand voltage characteristics and high current carrying capacity of the IPP60R190E6-VB make it a key power switching device in electric vehicle charging piles. It can effectively control energy conversion and ensure high efficiency and low heat loss of the system.

4. **Lighting power supply**: In LED lighting and other high-power lighting power supplies, IPP60R190E6-VB provides good high-voltage switching capabilities and is suitable for driving high-power LED modules or HID lamps.

5. **Industrial equipment**: This MOSFET is also widely used in industrial high-voltage power supply control and transformers, which can cope with harsh working environments and maintain stable power transmission.

In summary, as a high-voltage and high-efficiency MOSFET, IPP60R190E6-VB is suitable for a wide range of applications in high-power conversion, energy management, and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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