Featured Model

Your present location > Home page > Featured Model

IPP35CN10N G-VB Product details

Product introduction:

IPP35CN10N G-VB MOSFET Product Introduction:
IPP35CN10N G-VB is a high-performance single N-channel power MOSFET packaged in TO220 with a drain-source voltage (VDS) of 100V and a drain current (ID) of 55A. This MOSFET is designed with Trench technology and is optimized for high current and low on-resistance applications. Its on-resistance (RDS(ON)) is 38mΩ (VGS=4.5V) and 36mΩ (VGS=10V), respectively, providing stable performance at different gate-source voltages. IPP35CN10N G-VB is suitable for high-power power management, switching circuits, and applications requiring high reliability.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 55A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:
- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 38mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
- **Drain current (ID)**: 55A
- **Technology**: Trench
- **Operating temperature range**: Typically -55°C to +175°C
- **Gate charge (Qg)**: Typical value is 120nC, ensuring efficient and fast switching response
- **Power dissipation**: 80W

Domain and module applications:

Applicable fields and module examples:
1. **Medium power DC-DC converter**: The low on-resistance and moderate current handling capability of IPP35CN10N G-VB make it very suitable for use in medium power DC-DC converters, such as industrial power modules or communication equipment power supplies. This MOSFET can effectively improve conversion efficiency and reduce power consumption, enhancing the stability of the power system.

2. **Power tools**: In the power control system of power tools, this MOSFET can be used as a switching component for motor drive. Its high current carrying capacity and low on-resistance can maintain stable performance under high load conditions, improving the operating efficiency and reliability of the tool.

3. **Automotive electronics**: IPP35CN10N G-VB is suitable for use in automotive electronic systems, such as on-board power management and battery switch control. Its excellent switching performance and high current capability can meet the requirements of automotive electronic systems for high reliability and long life.

4. **Household appliances**: In the power management modules of household appliances, such as smart home devices and appliance controllers, this MOSFET can provide stable current switching and low power consumption. Its low on-resistance ensures high efficiency and stable operation of appliances under high load conditions.

In summary, the IPP35CN10N G-VB MOSFET is widely used in medium-power power management, power tools, automotive electronics, and household appliances due to its high voltage and current handling capabilities, low on-resistance, and efficient switching performance, which can significantly improve the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat