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IPP139N08N3 G-VB Product details

Product introduction:

IPP139N08N3 G-VB MOSFET Product Introduction
The IPP139N08N3 G-VB is a high-performance N-channel MOSFET designed with advanced Trench technology and packaged in TO220. The MOSFET provides excellent electrical performance and is particularly suitable for applications that require high voltage and high current handling. Its drain-source voltage (VDS) is rated at 80V and the continuous drain current (ID) is up to 100A. The MOSFET's low RDS(ON) value of 7mΩ at VGS=10V ensures minimal conduction losses and heat generation, thereby improving the overall efficiency and stability of the system.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description
- **Package:** TO220
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 80V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **RDS(ON) (drain-source on-resistance):** 9mΩ @ VGS=4.5V; 7mΩ @ VGS=10V
- **Continuous leakage current (ID):** 100A
- **Technology:** Trench technology, providing excellent switching speed and low on-resistance

Domain and module applications:

Application fields and module examples
1. **Power management:** IPP139N08N3 G-VB is widely used in efficient power management systems such as switch mode power supplies (SMPS) and DC-DC converters. Due to its low RDS(ON) value and high current handling capability, it can improve power conversion efficiency while reducing power consumption, making it very suitable for high-performance power applications.

2. **Automotive electronics:** In automotive electronic systems, especially in motor drives and battery management systems (BMS), this MOSFET is able to handle high current and high voltage situations. It performs well in motor control and power switching applications, ensuring stable power supply and efficient energy management.

3. **Industrial control:** IPP139N08N3 G-VB is also suitable for various industrial control applications, including motor control and high-power switching. Due to its high current handling capability and low on-resistance, it can operate stably under high load conditions, improving the efficiency and reliability of industrial equipment.

4. **Consumer Electronics:** In consumer electronics, such as computer power supplies, smart devices, and chargers, this MOSFET can provide efficient power switching and battery management functions. Its low power consumption and high efficiency ensure that the device can maintain stable performance during long-term operation.

IPP139N08N3 G-VB is an ideal choice for high performance and high stability in many fields due to its excellent electrical performance and wide adaptability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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