Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 4mΩ (V_GS = 4.5V)
- 3mΩ (V_GS = 10V)
- **Maximum leakage current (I_D)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and modules
**1. Power management module **
- **Description**: In the power management module, IPP055N03L G-VB MOSFET can be used as a switching element in the DC-DC converter. Its low on-resistance and high current carrying capacity help improve conversion efficiency and reduce power loss, thereby improving the energy efficiency and stability of the overall system.
**2. Motor drive **
- **Description**: In the motor drive circuit, this MOSFET can be used for high current applications such as DC motor drive or stepper motor drive. Its high current capability and low R_DS(ON) ensure lower power consumption and higher reliability during motor startup and operation.
**3. Switching power supply **
- **Description**: In the switching power supply design, IPP055N03L G-VB can be used as the main switching element, responsible for regulating and controlling the output voltage and current of the power supply. Its excellent switching performance and low on-resistance help improve the efficiency of the switching power supply and reduce the heat loss of the power supply.
**4. High-frequency switching applications**
- **Description**: In high-frequency switching applications, such as pulse width modulation (PWM) control circuits, the low on-resistance and fast switching characteristics of the IPP055N03L G-VB make it suitable for use as a switch control element to achieve high-efficiency switching operations at high frequencies.
These application areas take advantage of the low on-resistance and high current carrying capability of this MOSFET to ensure reliable operation under a variety of high-efficiency and high-load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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