Featured Model

Your present location > Home page > Featured Model

IPP048N06-VB Product details

Product introduction:

Product Introduction:
IPP048N06-VB is a high-performance single N-channel MOSFET in TO220 package and uses advanced Trench technology. The drain-source voltage (VDS) of this MOSFET is 60V and can handle a continuous drain current (ID) of up to 210A, which is very suitable for high-current, high-power applications. Its gate voltage (VGS) range is ±20V, and the gate threshold voltage (Vth) is 3V, which can be effectively turned on at a lower gate voltage. The on-resistance (RDS(ON)) is 9mΩ @ VGS=4.5V and 3mΩ @ VGS=10V, providing extremely low power consumption and suitable for a variety of switching applications requiring high efficiency.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 3V 210A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 3V 210A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 3V 210A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:
- **Package type**: TO220
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Continuous drain current (ID)**: 210A
- **Technology**: Trench technology

Domain and module applications:

Application areas and module examples:

1. **High-efficiency power converter**: IPP048N06-VB excels in high-efficiency power converters, especially for high-current DC-DC converters. Its low on-resistance and high current handling capability can effectively reduce switching losses and improve system efficiency, making it suitable for power management of high-power electronic devices.

2. **Electric vehicle drive system**: In electric vehicle drive systems, this MOSFET acts as a high-current switching component to provide stable motor control. Its high current capability and low on-resistance ensure that the electric vehicle's motor operates efficiently under various operating conditions.

3. **Battery Management System (BMS)**: In a battery management system, IPP048N06-VB can be used as a battery protection switch to control the charging and discharging process. Its high current handling capability and low power consumption ensure battery safety and efficient system operation.

4. **Inverter Application**: This MOSFET is suitable for inverters and other power conversion applications. Its high current capability and low on-resistance can optimize power conversion efficiency and ensure stability and high efficiency in photovoltaic inverters and other high-power inverter applications.

With its excellent high current handling capability and low power consumption characteristics, IPP048N06-VB is suitable for a variety of high-power switching applications, including power conversion, electric vehicle drives, battery management and inverters, providing an efficient and reliable solution for the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat