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IPP03N03LA-VB Product details

Product introduction:

IPP03N03LA-VB MOSFET Product Introduction

IPP03N03LA-VB is a high-performance N-channel MOSFET in TO220 package, designed for low-medium voltage and high-current applications. It supports a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, with a turn-on voltage (Vth) of 1.7V. The MOSFET has an on-resistance of only 3mΩ at VGS=10V and can handle drain currents up to 120A. Using advanced Trench technology, IPP03N03LA-VB provides excellent switching performance and low power consumption, making it ideal for high-efficiency power supplies and switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package type**: TO220
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench MOSFET technology

Domain and module applications:

Applications and module examples

1. **High-efficiency power switch**: IPP03N03LA-VB performs well in high-efficiency power switch applications, especially in switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current handling capability help reduce power loss and improve the energy efficiency of the system, making it an ideal choice for high-efficiency power conversion applications.

2. **Motor drive system**: In electric vehicles and industrial motor drive systems, this MOSFET can effectively handle high current demands. Its low on-resistance and high current carrying capacity can improve the efficiency of motor drive systems, reduce power consumption and heat, and is suitable for motor control modules and drive circuits.

3. **High-power load switch**: Due to its high current carrying capacity and low on-resistance, IPP03N03LA-VB is an ideal choice for high-power load switches. It can work stably under high current loads and is suitable for high-power switching power supplies, load switch modules and other applications that require high efficiency and low power consumption.

4. **Industrial Power Management**: In industrial power management systems, this MOSFET provides efficient current switching. It is suitable for power modules and protection circuits, especially in application scenarios that require high current handling and low power consumption, such as power management and control systems for industrial equipment.

The low on-resistance and high current handling capability of the IPP03N03LA-VB make it excellent in areas such as high-efficiency power switching, motor drive, high-power load switching and industrial power management, and is particularly suitable for applications that require high efficiency and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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