Product introduction：
Product Introduction:
HYG170ND03LA1C1-VB is a high-performance dual N-channel MOSFET in DFN8(3X3)-B package, designed for applications requiring high performance and low on-resistance. This MOSFET is configured as a dual N-channel structure, suitable for high-frequency, high-power power management and switching applications. It has a maximum drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Manufactured using advanced trench technology, the HYG170ND03LA1C1-VB has an on-resistance of 20mΩ at a VGS of 4.5V and an on-resistance of 16mΩ at a VGS of 10V, and can handle a drain current (ID) of up to 26A. Its small DFN package enables it to excel in space-constrained applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
30V |
|
1.7V |
26A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
30V |
|
1.7V |
26A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
30V |
|
1.7V |
26A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3)-B |
Dual-N+N |
|
|
|
|
|
|
|
Parameter description:
- **Package**: DFN8(3X3)-B
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
- **Drain current (ID)**: 26A
- **Technology**: Trench technology
Domain and module applications：
Application areas and modules:
1. **High-efficiency power management**: HYG170ND03LA1C1-VB is suitable for high-efficiency power management systems, such as switch mode power supplies (SMPS) and DC-DC converters. In these applications, its low on-resistance and high current handling capability help improve power conversion efficiency, reduce power consumption and heat generation, and thus optimize the performance of the power management system.
2. **Motor drive**: In motor drive applications that need to handle medium current and high frequency, such as power tools and small electric vehicles, the dual N-channel configuration of HYG170ND03LA1C1-VB can effectively drive the motor, providing reliable performance and low conduction losses.
3. **Power switch**: This MOSFET is suitable for power switch modules, such as switching elements used in switching power supplies. Its low on-resistance and high current carrying capacity can ensure efficient operation of the power switch and improve the power density and reliability of the overall system.
4. **Automotive electronics**: In automotive electronic systems, such as high-frequency switches and small power modules, HYG170ND03LA1C1-VB is able to handle high current and high-frequency operations, providing stable performance and space-saving packaging solutions to meet the high power and compact design requirements of automotive electronics.
HYG170ND03LA1C1-VB is suitable for high-efficiency power management, motor drive, power switching and automotive electronics with its dual N-channel structure, high current carrying capacity and low on-resistance, and can provide excellent performance and reliability in various high-power and high-frequency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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