Featured Model

Your present location > Home page > Featured Model

HYG130ND03LR1S-VB Product details

Product introduction:

Product Introduction: HYG130ND03LR1S-VB

HYG130ND03LR1S-VB is a high-performance dual N-channel MOSFET in SOP8 package. It has a drain-source voltage (VDS) of 30V and a gate drive voltage (VGS) of ±20V, and is designed for switching applications that require high efficiency and small package. This MOSFET uses advanced trench technology, with an on-resistance as low as 16mΩ at VGS=10V, and can handle drain currents up to 8.5A. HYG130ND03LR1S-VB is suitable for space-constrained applications, providing high performance and reliability.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A 16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
Detailed parameter description:

1. **Package type**: SOP8
2. **Configuration**: Dual N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 8.5A
8. **Technology type**: Trench technology (Trench)
9. **Maximum power consumption**: 1.2W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 40nC
12. **Reverse recovery time (trr)**: 45ns

Domain and module applications:

Applications and module examples:

1. **Power management modules**: HYG130ND03LR1S-VB is suitable for high-efficiency power management modules, especially where high switching frequency and small package are required. It is widely used in DC-DC converters and switching power supplies (SMPS) to provide efficient power conversion and management.

2. **Portable electronic devices**: Due to its compact SOP8 package, HYG130ND03LR1S-VB is ideal for use in space-constrained portable electronic devices such as smartphones, tablets and wearable devices. Its high efficiency and low on-resistance help improve the overall efficiency and battery life of the device.

3. **Automotive electronic applications**: In automotive electronic devices, this MOSFET can be used in various switching and control applications such as power windows, power seats and on-board power management systems. Its reliability and high efficiency ensure stable operation and long life of automotive systems.

4. **Household appliances**: HYG130ND03LR1S-VB can be used in household appliances such as washing machines, air conditioners and microwave ovens. Its high current carrying capacity and small package design make it suitable for power switches and control modules in these devices.

5. **LED driver**: In LED drive circuits, this MOSFET can be used as a high-efficiency switching component. Its low on-resistance and small package make it very suitable for LED lighting systems that require high switching efficiency and small size.

The high efficiency and compact design of HYG130ND03LR1S-VB enable it to perform well in a variety of applications, providing an efficient and reliable solution for power management and switch control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat