Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
13.5A |
|
|
10mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
13.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
13.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
2. HYG080ND03LA1S-VB Detailed parameter description
| Parameter | Description |
|-----------------------|-----------------------------------------|
| **Package type** | SOP8 |
| **Configuration** | Dual N-channel|
| **Maximum drain-source voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Gate threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 12mΩ (@VGS = 4.5V) |
| | 10mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 13.5A |
| **Technology** | Trench technology|
| **Power consumption** | Low on-resistance, efficient energy conversion|
| **Typical Application** | Switching Power Supply, Power Management, Drive Circuit |
Domain and module applications：
3. Application fields and module examples
1. **Switching power supply**
HYG080ND03LA1S-VB is very suitable for switching power supply design due to its low on-resistance and high current handling capability. In this application, the MOSFET can be used as an efficient switching element, improving power conversion efficiency and reducing power consumption and heat generation.
2. **Power management**
In the power management module, HYG080ND03LA1S-VB is able to efficiently control the flow of current and optimize power distribution. Its low on-resistance helps improve power conversion efficiency, making it an ideal choice, especially in scenarios that require precise power control.
3. **Motor drive circuit**
In the motor drive circuit, the dual N-channel configuration of HYG080ND03LA1S-VB allows for effective control of the start, stop and speed regulation of the motor. The high current handling capability and low on-resistance of this MOSFET ensure the high efficiency and stability of the motor drive.
4. **LED Driver**
HYG080ND03LA1S-VB is also suitable for LED driver circuits. In this application, the low on-resistance of the MOSFET helps reduce power loss, improve the light efficacy and power efficiency of the LED, and ensure stable brightness and long life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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