Product introduction：
1. HYG075N10LS1C2-VB Product Introduction
HYG075N10LS1C2-VB is a high-performance N-channel MOSFET in DFN8 (5x6) package, designed for high voltage and medium current applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, and it can withstand a drain current of up to 65A. Its gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 2.5V. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) is 12.36mΩ, and it is further reduced to 9mΩ at a gate-source voltage of 10V. HYG075N10LS1C2-VB uses advanced Trench technology to provide low conduction loss and high-efficiency power management performance, suitable for a variety of high-power switching and power supply applications.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
2.5V |
65A |
|
|
9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
2.5V |
65A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
2.5V |
65A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
II. HYG075N10LS1C2-VB Detailed parameter description
1. **Package type**: DFN8(5x6)
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 12.36mΩ@VGS=4.5V
- 9mΩ@VGS=10V
7. **Drain current (ID)**: 65A
8. **Technology**: Trench
9. **Operating temperature range**: -55°C to +175°C
10. **Maximum pulse current**: 85A (10us)
Domain and module applications：
3. Application fields and module examples
1. **Power management system**: The low on-resistance and high voltage carrying capacity of HYG075N10LS1C2-VB make it very suitable for power management systems. In this application, it can effectively reduce power loss and improve the overall efficiency of the system. It is widely used in computer power modules, communication equipment power supplies and industrial power systems.
2. **DC-DC converter**: The low RDS(ON) and high current handling capability of this MOSFET make it an ideal switching element for DC-DC converters. It can efficiently handle current loads and improve conversion efficiency. It is suitable for power modules, electric vehicle power systems and other high power conversion applications.
3. **Automotive electronic systems**: In automotive electronic systems, HYG075N10LS1C2-VB can be used for motor drives and battery management systems in electric vehicles. Its high voltage and high current carrying capacity ensure the stable operation of electric vehicles while improving the performance and reliability of the system.
4. **Inverter**: HYG075N10LS1C2-VB also plays an important role in the inverter. Its low on-resistance and high current handling capability make it suitable for high-power inverters, providing efficient power conversion, suitable for applications such as solar inverters and UPS inverters.
The excellent performance of HYG075N10LS1C2-VB makes it excel in high voltage and high current applications, and is an important component in power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page.png)
