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HYG046N04LQ1C2-VB Product details

Product introduction:

1. HYG046N04LQ1C2-VB Product Introduction

HYG046N04LQ1C2-VB is a high-performance single N-channel power MOSFET in DFN8 (5X6) package. This MOSFET supports a drain-source voltage of up to 40V and can handle a drain current of up to 70A. Its on-resistance is 6mΩ at a gate-source voltage of 4.5V and 4.7mΩ at a gate-source voltage of 10V. HYG046N04LQ1C2-VB uses Trench technology and is designed to provide low on-resistance and excellent switching performance, making it excel in applications with high-efficiency energy conversion and low power loss.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 40V 2.5V 70A 4.7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 40V 2.5V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 40V 2.5V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
2. HYG046N04LQ1C2-VB Detailed parameter description

| Parameter | Description |
|-----------------------|-----------------------------------------|
| **Package type** | DFN8(5X6) |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 40V |
| **Gate-source voltage (VGS)** | ±20V |
| **Gate threshold voltage (Vth)** | 2.5V |
| **On-resistance (RDS(ON))** | 6mΩ (@VGS = 4.5V) |
| | 4.7mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 70A |
| **Technology** | Trench technology|
| **Power consumption** | Low on-resistance, efficient energy conversion |
| **Typical Applications** | Efficient power management, switch mode power supply, power conversion |

Domain and module applications:

3. Application fields and module examples

1. **High-efficiency power management**
HYG046N04LQ1C2-VB is very suitable for high-efficiency power management systems due to its low on-resistance and high current handling capability. For example, in a switch mode power supply (SMPS), it can provide efficient energy conversion, reduce power loss, and improve system efficiency.

2. **Switch mode power supply (SMPS)**
In switch mode power supply design, the high current carrying capacity and low on-resistance of HYG046N04LQ1C2-VB make it an ideal switching element. This MOSFET can efficiently handle the switching tasks in the power conversion process, ensuring the stability and reliability of the power system.

3. **Power conversion device**
For applications that require efficient power conversion, such as DC-DC converters and AC-DC converters, HYG046N04LQ1C2-VB provides excellent switching performance. It can reduce energy loss during the conversion process, improve the overall efficiency of the system, and is suitable for various power conversion devices.

4. **Electric vehicles and intelligent battery management systems**
In electric vehicles and intelligent battery management systems, the high current handling capability and low on-resistance of HYG046N04LQ1C2-VB make it suitable for battery management and motor control. Its efficient energy conversion capability can optimize battery efficiency and improve the overall performance and endurance of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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