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HY65R201P-VB Product details

Product introduction:

1. HY65R201P-VB Product Introduction

HY65R201P-VB is a high voltage single N-channel MOSFET packaged in TO220, using advanced SJ_Multi-EPI technology. The MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, as well as a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 160mΩ at a gate voltage of 10V, supporting a drain current (ID) of up to 20A. The high voltage capability and stable performance of the HY65R201P-VB make it ideal for high voltage applications, including power conversion and control systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. HY65R201P-VB detailed parameter description

- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Typical operating temperature range**: -55°C to 150°C

Domain and module applications:

3. Application fields and module examples

1. **High voltage power converter**
HY65R201P-VB is very suitable for high voltage power converters. Its 650V drain-source voltage capability enables it to handle switching tasks in high voltage environments, while SJ_Multi-EPI technology ensures low on-resistance, thereby improving power conversion efficiency. This is critical for high voltage power modules and industrial power systems.

2. **Inverter and power conditioning system**
In inverter and power conditioning systems, HY65R201P-VB is capable of handling voltages up to 650V and is suitable for high voltage DC to AC conversion and power conditioning applications. Its stable performance and low on-resistance help improve system efficiency and reliability.

3. **Power switch and control system**
In power switch and control systems, this MOSFET can be used for high voltage switch control. Its high voltage withstand capability and good conduction characteristics make it suitable for high-voltage switchgear and power control modules, improving the control accuracy and stability of the system.

4. **Electric vehicle charging system**
For electric vehicle charging systems, HY65R201P-VB provides high voltage handling capabilities to support high voltage switch operations in electric vehicle charging stations. Its high withstand voltage and stable performance help improve the safety and efficiency of charging systems.

With its high voltage capability, low on-resistance and stability, HY65R201P-VB provides reliable switching solutions in high voltage power converters, inverters, power switches and electric vehicle charging systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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