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HY3503C2-VB Product details

Product introduction:

Product Introduction: HY3503C2-VB
HY3503C2-VB is a high current, high efficiency single N-channel MOSFET in DFN8 (5x6mm) package, designed for high power and high efficiency applications. It has a drain-source voltage (VDS) of 30V and a gate drive voltage (VGS) of ±20V, as well as an extremely low on-resistance, ensuring excellent performance in switching operations. HY3503C2-VB uses advanced trench technology and can handle drain currents up to 160A, making it suitable for a variety of applications requiring high current and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 160A 1.8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description:
1. **Package type**: DFN8 (5x6mm)
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 1.8mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 160A
8. **Technology type**: Trench technology (Trench)
9. **Maximum power consumption**: 180W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 200nC
12. **Reverse recovery time (trr)**: 30ns

Domain and module applications:

Application areas and module examples:
1. **High-efficiency power conversion**: The HY3503C2-VB is suitable for high-efficiency power converters such as DC-DC converters and switching power supplies (SMPS). Its low on-resistance and high current handling capability enable it to perform well in high-power, high-frequency applications, effectively reducing energy loss and improving system efficiency.

2. **Motor drive system**: In motor control systems, the HY3503C2-VB is able to support large current loads and is very suitable for high-power motor drive applications such as power tools, electric vehicle drive modules, etc., providing stable current control and high efficiency.

3. **Battery Management System (BMS)**: This MOSFET can be used in battery management systems, especially in electric vehicles and energy storage systems, to handle large currents, accurately control the charging and discharging process, and improve the stability and efficiency of the battery system.

4. **Automotive electronics**: HY3503C2-VB is suitable for high-power switching applications in automotive electronic modules, such as power seats, on-board power management modules, etc., and can provide efficient power switching and management functions in the automotive environment.

5. **Power inverter**: In photovoltaic systems and uninterruptible power supplies (UPS), HY3503C2-VB can be used as a key component of the power inverter to ensure high efficiency and stability of the system by handling high current and high power.

The low on-resistance and high current capability of HY3503C2-VB make it excel in various high-power applications, providing reliable power management and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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