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HY3208M-VB Product details

Product introduction:

HY3208M-VB MOSFET Product Introduction

The HY3208M-VB is a single N-channel MOSFET in a TO220 package, designed for high voltage and high current applications. It has a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, making it suitable for operation in high voltage environments. The threshold voltage (Vth) of this MOSFET is 3V, and the on-resistance (RDS(ON)) is 9mΩ at VGS=4.5V, which decreases to 7mΩ at VGS=10V. This low on-resistance and high current handling capability (maximum drain current of 100A) enable the HY3208M-VB to excel in power systems that require high efficiency and stability. The HY3208M-VB uses advanced trench technology (Trench), providing excellent current handling and thermal management performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
HY3208M-VB Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

1. **Power converter**: The high current handling capability and low on-resistance of HY3208M-VB make it very suitable for high-power DC-DC converters. Its high efficiency and low power consumption can significantly improve the power conversion efficiency, reduce energy loss, and ensure the stability and reliability of the power system.

2. **Electric vehicle**: In the battery management and drive system of electric vehicles, HY3208M-VB can handle currents up to 100A and is suitable for motor control and power conversion modules. Its low on-resistance and high current capability can improve the overall performance and energy efficiency of electric vehicles.

3. **Industrial control system**: In industrial automation and control systems, HY3208M-VB can be used for motor drives and high-power switching applications. The low on-resistance and high current carrying capacity of this MOSFET help improve the efficiency and stability of the system and meet the needs of industrial equipment for high power and high efficiency.

4. **Consumer Electronics**: In some high-power consumer electronics products (such as large battery chargers and high-efficiency power adapters), the low on-resistance of the HY3208M-VB can reduce power loss, improve the efficiency and performance of the equipment, and provide users with a more stable and reliable power supply solution.

The high voltage and high current handling capabilities of the HY3208M-VB enable it to perform well in multiple power management and power control applications that require high performance and reliability, and is particularly suitable for demanding power systems and high-power application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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