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HY1808AP-VB Product details

Product introduction:

1. HY1808AP-VB Product Introduction

HY1808AP-VB is a high-performance single N-channel MOSFET in TO220 package. The design of the device is based on advanced trench technology, with a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, providing excellent current handling capability and low on-resistance (RDS(ON)). At a gate voltage of 4.5V, the on-resistance is 9mΩ, which decreases to 7mΩ at 10V, supporting a maximum drain current (ID) of 100A. The high current carrying capacity and low power consumption characteristics of the HY1808AP-VB make it suitable for power management and switching applications that require high efficiency and stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. HY1808AP-VB Detailed Parameters

- **Package Type**: TO220
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 80V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 100A
- **Technology Type**: Trench
- **Typical Operating Temperature Range**: -55°C to 150°C

Domain and module applications:

3. Application fields and module examples

1. **Power management system**
In power management systems, the low on-resistance and high current carrying capacity of HY1808AP-VB make it very suitable for high-efficiency power conversion modules. It can effectively reduce energy loss in power switches and improve overall system efficiency and reliability.

2. **Switching power supply**
As the main switching element in the switching power supply, HY1808AP-VB can handle large currents and operate at low on-resistance, reducing switching losses and thus improving power conversion efficiency. This makes it excel in power supply designs that require high efficiency and stability.

3. **Electric vehicle drive system**
In electric vehicle drive systems, the high current carrying capacity and low on-resistance characteristics of this MOSFET help improve the efficiency and performance of motor drive modules. It can maintain a stable working state under high current loads, thereby optimizing the overall power system of electric vehicles.

4. **Solar Inverter**
In solar inverters, the high efficiency and high current handling capability of the HY1808AP-VB are critical to converting solar DC power to AC power. Its low on-resistance helps reduce energy losses and improves the overall performance and reliability of the inverter.

With its high current handling capability and low power consumption, the HY1808AP-VB is suitable for a wide range of efficient power management and switching applications and is an ideal choice in demanding circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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