Product introduction：
1. HY1708P-VB Product Introduction
HY1708P-VB is a single N-channel MOSFET based on trench technology, with a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. This device has excellent on-resistance performance, with RDS(ON) of 9mΩ at a gate voltage of 4.5V and 7mΩ at 10V. Its maximum continuous drain current (ID) is 100A, suitable for high current and low conduction loss applications. HY1708P-VB adopts TO220 package, which is convenient for heat dissipation and installation, and is widely used in power management and high-efficiency switching applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. HY1708P-VB Detailed Parameters
- **Package Type**: TO220
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 80V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 100A
- **Technology Type**: Trench
- **Application Environment**: Working in circuits with high current and high performance requirements
- **Typical Operating Temperature Range**: -55°C to 150°C
Domain and module applications：
III. Application fields and module examples
1. **Electric vehicle charging module**
In electric vehicle charging modules, the high current carrying capacity and low on-resistance of HY1708P-VB make it an ideal choice for DC conversion circuits. It can reduce switching losses in efficient fast chargers and improve overall energy efficiency.
2. **DC-DC converter**
HY1708P-VB plays a key role in DC-DC converters, especially in applications with high current requirements. Its trench technology and low on-resistance characteristics can provide lower power consumption and higher switching speeds, making it suitable for efficient power management systems.
3. **Solar inverter**
In solar inverters, this MOSFET can be used to improve the efficiency of DC voltage conversion. Its high current carrying capacity ensures the reliability and long-term stable working performance of the inverter at high power output.
4. **Uninterruptible Power Supply (UPS) System**
HY1708P-VB can be used as a high-efficiency power switching module in UPS systems. It has excellent performance when dealing with large current loads, can quickly respond to power switching needs, and ensure the stability of continuous power supply to the system.
With its efficient current handling capability and low loss characteristics, HY1708P-VB is very suitable for power management fields that require efficient switching and high current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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