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HY1607AP-VB Product details

Product introduction:

Product Introduction
HY1607AP-VB is a high-efficiency single N-channel power MOSFET in TO220 package, designed for medium voltage and high current applications. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V, the MOSFET supports a continuous drain current (ID) of up to 120A. It utilizes advanced Trench technology to provide extremely low on-resistance (RDS(ON)), thereby optimizing power conversion efficiency and reducing system power loss.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 3V 120A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples
HY1607AP-VB MOSFET is very suitable for applications that require medium voltage and high current control. In the field of electric vehicles, it can be used as part of a motor controller to drive the motor and ensure efficient energy transfer and reliable current control. In power management systems, this MOSFET can be used in DC-DC converters and power switches to improve energy efficiency and support smooth operation of high current loads. In addition, in the field of industrial automation, it can effectively support the operation of high-power devices, especially in situations where large currents need to be precisely controlled. In consumer electronics, it is suitable for power modules, providing strong current handling capabilities and maintaining low power consumption. These application areas can fully utilize the high current handling capability and low on-resistance characteristics of the HY1607AP-VB MOSFET, making it an ideal choice for high-performance power solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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