Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
70A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
70A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
70A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**HY1603P-VB** MOSFET is suitable for the following fields and modules due to its high current capability and low on-resistance:
1. **Power management**: In high current DC-DC converters and power modules, **HY1603P-VB** can be used as an efficient switching element to provide stable power output while reducing power consumption and improving system efficiency.
2. **Motor drive**: In motor control systems, this MOSFET can handle currents up to 70A, ensuring high efficiency and stable operation of the motor, reducing power consumption and heat generation.
3. **Load switch**: Suitable for load switch applications in industrial equipment and household appliances, it can provide reliable switching performance under high current loads and maintain low on-resistance.
4. **Battery management system**: In high power battery management systems, **HY1603P-VB** can be used to control the battery charging and discharging process, optimize energy transfer, and ensure battery safety and efficiency.
Through these applications, **HY1603P-VB** MOSFET can play an important role in high-current and high-efficiency circuits, improving the performance and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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