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HY1310C2-VB Product details

Product introduction:

Product Introduction

HY1310C2-VB is a high-performance single N-channel MOSFET packaged in DFN8 (5x6), a compact package with excellent heat dissipation characteristics. The drain-source voltage (VDS) of this MOSFET is 100V, suitable for high-voltage applications. Its on-resistance (RDS(ON)) is 17mΩ (at VGS of 10V), ensuring efficient switching performance and low power consumption. HY1310C2-VB adopts advanced Trench technology, providing excellent electrical performance and is widely used in various electronic devices requiring high current and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 100V 1.8V 30A 17mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 100V 1.8V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 100V 1.8V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description

- **Model**: HY1310C2-VB
- **Package**: DFN8(5x6)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 17mΩ @ VGS=10V
- **Drain current (ID)**: 30A
- **Technology**: Trench

Domain and module applications:

Applications and Modules

HY1310C2-VB MOSFET is suitable for multiple fields and modules due to its excellent performance parameters:

1. **Power Management**: In switch mode power supplies (SMPS) and DC-DC converters, the low on-resistance and high current handling capability of HY1310C2-VB can effectively reduce power loss and improve system efficiency. It is very suitable for high-efficiency power supply design, helping to ensure a stable supply of power and improve the energy efficiency of the overall system.

2. **Load Switch**: This MOSFET performs well in load switching applications, especially in load switching occasions that need to handle medium to high currents, such as industrial automation equipment, home appliances and consumer electronics. Its low on-resistance helps reduce switching losses and improves the efficiency and reliability of load management.

3. **Motor Drive**: HY1310C2-VB is suitable for motor control applications such as power tools, robots and electric vehicles. Its high current handling capability and low power consumption characteristics can efficiently drive motors and improve system performance and response speed. In these applications, the low on-resistance of MOSFET can effectively reduce the energy loss in motor operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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