Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
|
3.9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Package type**: DFN8 (3x3)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 3.9mΩ @ VGS = 10V
- **Drain current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**HY1303C-VB** MOSFET is very suitable for the following fields and modules due to its excellent electrical performance and compact packaging design:
1. **Power management**: In DC-DC converters and power modules, **HY1303C-VB** can be used as an efficient switching element to reduce switching losses, improve system efficiency and stability, and is particularly suitable for high-current power management applications.
2. **Motor drive**: In high-current motor control systems, this MOSFET can handle high-current loads, ensure high efficiency and reliability of the motor under various operating conditions, and reduce power consumption and heat generation.
3. **Load switch**: Suitable for various load switch modules, it can provide stable switching performance at currents up to 60A, and is suitable for high-load applications in industrial equipment.
4. **Battery Management System**: In an efficient battery management system, **HY1303C-VB** can be used to control the charging and discharging process, optimize energy transfer, protect battery safety, and handle higher current demands.
Through these applications, **HY1303C-VB** MOSFET can play an important role in high-current and high-efficiency circuits, improving the performance and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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