Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-2.5V |
-35A |
|
|
8.3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-2.5V |
-35A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-2.5V |
-35A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
|
|
2. HY12P03C2-VB Detailed parameter description
- **Package type**: DFN8(5x6)
- **Channel configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 15.5mΩ @ VGS = 4.5V
- 8.3mΩ @ VGS = 10V
- **Continuous drain current (ID)**: -35A
- **Maximum pulsed drain current (IDM)**: -140A
- **Junction temperature and storage temperature (TJ, TSTG)**: -55°C to +175°C
- **Input capacitance (Ciss)**: 4000 pF (typical)
- **Reverse recovery time (trr)**: 100 ns (typical)
Domain and module applications:
III. Application Fields and Module Examples
The high current handling capability and low on-resistance of HY12P03C2-VB make it outstanding in the following fields and modules:
1. **Power Management Module**: In power management systems, this MOSFET can be used for efficient current switching and load protection, especially for miniaturized power adapters such as laptops and mobile phone chargers.
2. **Electric Vehicle (EV) Charger**: In the charging system of electric vehicles, HY12P03C2-VB can be used to efficiently control the charging current, optimize the charging process, reduce power loss, and improve system efficiency and reliability.
3. **Portable Electronic Devices**: In portable electronic products such as tablets and smart watches, HY12P03C2-VB can provide stable high current switching control in a compact design to ensure stable operation of the device.
4. **Switching Power Supplies and DC-DC Converters**: In switching power supplies and DC-DC converters, this MOSFET can be used for low voltage and high current switching operations, optimize power conversion efficiency, and achieve high-efficiency control in high-density circuit boards.
These application examples demonstrate the superior performance of HY12P03C2-VB under high current and high-density design requirements, and are suitable for a variety of electronic devices that require miniaturization and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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