Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
55A |
|
|
36mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
55A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
55A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. HY1210P-VB Detailed parameter description
1. **Package type**: TO220
2. **Polarity configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 38mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 55A
8. **Technology type**: Trench technology
Domain and module applications:
3. Application fields and module examples
HY1210P-VB MOSFET is widely used in the following fields and modules due to its high current handling capability and low on-resistance:
1. **Power management**: Due to its low on-resistance and high withstand voltage, this MOSFET is suitable for high-efficiency power management systems such as DC-DC converters and AC-DC power supplies. It can effectively reduce power loss and improve the overall efficiency of the power system.
2. **Motor drive**: In motor drive applications such as industrial motor drive and electric vehicle motor control, HY1210P-VB can provide reliable high-current switching capability to ensure stable operation of the motor and improve drive efficiency.
3. **Power switch**: Suitable for various power switching applications such as switching power supplies, power amplifiers, etc. Due to its high current handling capability and low on-resistance, this MOSFET can provide stable switching performance under high power loads.
4. **Automotive electronics**: In automotive electronic devices such as electric steering systems, on-board chargers, and battery management systems, this MOSFET can handle high-power loads, provide reliable power switching solutions, and improve the reliability and performance of automotive electronic systems.
These applications demonstrate the wide applicability of the HY1210P-VB, especially in areas that require high efficiency and high power handling capabilities, where its performance advantages are fully utilized.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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