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HY1210P-VB Product details

Product introduction:

1. HY1210P-VB Product Introduction

HY1210P-VB is a high-performance single N-channel MOSFET packaged in TO220. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and adopts advanced trench technology. It provides low on-resistance and high current handling capability, making it excel in high-power applications. Its threshold voltage (Vth) is 1.8V, ensuring stable operation even at low gate-source voltages, making it very suitable for a variety of applications requiring high efficiency and high power density.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 55A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. HY1210P-VB Detailed parameter description

1. **Package type**: TO220
2. **Polarity configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 38mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 55A
8. **Technology type**: Trench technology

Domain and module applications:

3. Application fields and module examples

HY1210P-VB MOSFET is widely used in the following fields and modules due to its high current handling capability and low on-resistance:

1. **Power management**: Due to its low on-resistance and high withstand voltage, this MOSFET is suitable for high-efficiency power management systems such as DC-DC converters and AC-DC power supplies. It can effectively reduce power loss and improve the overall efficiency of the power system.

2. **Motor drive**: In motor drive applications such as industrial motor drive and electric vehicle motor control, HY1210P-VB can provide reliable high-current switching capability to ensure stable operation of the motor and improve drive efficiency.

3. **Power switch**: Suitable for various power switching applications such as switching power supplies, power amplifiers, etc. Due to its high current handling capability and low on-resistance, this MOSFET can provide stable switching performance under high power loads.

4. **Automotive electronics**: In automotive electronic devices such as electric steering systems, on-board chargers, and battery management systems, this MOSFET can handle high-power loads, provide reliable power switching solutions, and improve the reliability and performance of automotive electronic systems.

These applications demonstrate the wide applicability of the HY1210P-VB, especially in areas that require high efficiency and high power handling capabilities, where its performance advantages are fully utilized.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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