Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
3V |
100A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
3V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
3V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Parameter Description
1. **Package type (Package):** DFN8 (5x6) package, with small size and excellent thermal performance, suitable for compact electronic equipment design.
2. **Configuration (Configuration):** Single N-channel (Single-N-Channel), suitable for circuits with unidirectional current flow.
3. **Drain-source voltage (VDS):** 60V, able to work stably in medium and high voltage environments.
4. **Gate-source voltage (VGS):** ±20V, providing a large gate voltage tolerance to adapt to different control signal requirements.
5. **Throw-on voltage (Vth):** 3V, the relatively high threshold voltage ensures reliable switching under higher gate drive voltages.
6. **On-resistance (RDS(ON)):**
- 5mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
Extremely low on-resistance, effectively reducing power loss and improving overall efficiency.
7. **Continuous drain current (ID):** 100A, supports high current applications, suitable for high power loads.
8. **Technology:** Using Trench technology to provide lower on-resistance and higher switching efficiency.
Domain and module applications：
Applications and Modules
**HY030N06C2-VB** is suitable for multiple high-performance fields and modules, including:
1. **High Power Switching:** Due to its extremely low on-resistance and high current handling capability, this MOSFET is ideal for high-power switching applications, such as high-power DC-DC Converters and Switch Mode Power Supplies (SMPS).
2. **Motor Drives:** In motor control applications, HY030N06C2-VB can provide efficient current switching, especially in high-current motor drive systems, helping to reduce power losses and improve system efficiency.
3. **Battery Management Systems:** In battery charge and discharge management, the low on-resistance and high current capability of this MOSFET help improve the performance and reliability of the overall battery system.
4. **Automotive Electronics:** Suitable for automotive power management systems, load switches, and motor control modules, it can withstand high current and high voltage environments to ensure system stability.
5. **Industrial Automation:** In industrial control systems, this MOSFET can be used for efficient power switching and load control, supporting high-power and high-efficiency industrial applications.
The high performance and versatility of the HY030N06C2-VB make it a key component in a variety of power and electronic applications, meeting stringent electrical requirements and providing reliable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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