Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
50A |
|
|
24mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
50A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
50A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. HUFA76423P3-VB Detailed parameter description
1. **Package type**: TO-220
- The TO-220 package provides excellent heat dissipation and is suitable for high-power switching and amplification applications, and can effectively handle larger powers.
2. **Channel configuration**: Single N-channel
- The single N-channel design makes this MOSFET suitable for a variety of switching and amplification applications, with efficient switching speed and conductivity.
3. **Drain-source voltage (VDS)**: 60V
- The maximum drain-source voltage is 60V, which is suitable for medium voltage applications and can effectively withstand common voltage fluctuations.
4. **Gate voltage (VGS)**: ±20V
- Supporting a gate-source voltage of ±20V provides design flexibility and ensures the stability of the MOSFET under different operating conditions.
5. **Threshold Voltage (Vth)**: 1.7V
- The low threshold voltage of 1.7V allows the device to be turned on at a lower gate drive voltage, enhancing the device's sensitivity and response speed.
6. **On-resistance (RDS(ON))**:
- **28mΩ @ VGS=4.5V**
- **24mΩ @ VGS=10V**
- Low on-resistance helps reduce power loss and improve circuit efficiency, suitable for high-efficiency application requirements.
7. **Drain Current (ID)**: 50A
- Able to handle up to 50A of continuous current, suitable for high-current applications, ensuring system stability and reliability.
8. **Technology Type**: Trench
- Trench technology improves the device's conductivity, reduces switching losses, and improves overall efficiency.
Domain and module applications：
III. Application fields and module examples
1. **Power management**
- In power converters (such as DC-DC converters and AC-DC adapters), the low on-resistance and high current carrying capacity of HUFA76423P3-VB make it an ideal switching element, which helps to improve the conversion efficiency and stability of the power supply.
2. **Motor drive**
- This MOSFET can be used in motor drive circuits, such as electric vehicles and industrial motor control systems. Its high current capability and low on-resistance can ensure stable operation of the motor under high load.
3. **Power amplifier**
- In the power amplifier circuit, the high current capability and low power loss characteristics of HUFA76423P3-VB enable it to effectively drive the load and provide stable amplification, which is suitable for audio amplification and RF applications.
4. **Battery management system**
- In the battery management system, this MOSFET can be used for battery switch control and overcurrent protection. Its low on-resistance and high current handling capability help improve system safety and efficiency.
The high performance of the HUFA76423P3-VB enables it to excel in a variety of high current and medium voltage applications, such as power management, motor drive, power amplifier, and battery management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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