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HUFA75631P3-VB Product details

Product introduction:

1. HUFA75631P3-VB Product Introduction

HUFA75631P3-VB is a high-performance single-channel N-channel MOSFET in TO-220 package, suitable for various switching applications. The device has a low turn-on voltage and on-resistance, can effectively handle currents up to 55A, and has a maximum withstand voltage of 100V. It uses advanced trench technology, which enables it to exhibit excellent conduction characteristics at low gate drive voltages, making it very suitable for circuit designs that require high efficiency and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 55A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. HUFA75631P3-VB Detailed parameter description

1. **Package type**: TO-220
- The TO-220 package provides good heat dissipation and is suitable for applications requiring higher power handling capabilities.

2. **Channel configuration**: Single N-channel
- The single-channel design enables the device to have efficient control capabilities in simple switching applications.

3. **Drain-source voltage (VDS)**: 100V
- The maximum withstand voltage is 100V, suitable for medium and high voltage applications.

4. **Gate voltage (VGS)**: ±20V
- The maximum allowable gate-source voltage is ±20V, providing design flexibility and protection.

5. **Threshold voltage (Vth)**: 1.8V
- The low threshold voltage of 1.8V enables it to work efficiently under low voltage drive.

6. **On-resistance (RDS(ON))**:
- **38mΩ @ VGS=4.5V**
- **36mΩ @ VGS=10V**
- Low on-resistance helps reduce power loss and improve circuit efficiency.

7. **Drain current (ID)**: 55A
- The device is capable of carrying up to 55A of continuous current, making it ideal for high current applications.

8. **Technology type**: Trench
- Trench technology improves the device's conduction efficiency and reduces gate charge while maintaining low on-resistance.

Domain and module applications:

3. Application fields and module examples

1. **Power management system**
- HUFA75631P3-VB is commonly used in DC-DC converters and AC-DC adapters. With its high current handling capability and low on-resistance, it can significantly improve the efficiency and reliability of the power supply.

2. **Motor drive**
- In motor control circuits, this MOSFET can be used as a switching element in an H-bridge circuit, suitable for industrial automation equipment and electric vehicle drive systems. Its high current capability and fast switching characteristics ensure stable motor operation.

3. **Uninterruptible power supply (UPS)**
- HUFA75631P3-VB can be used in uninterruptible power supply systems as the main switching device to ensure high efficiency and low loss during power switching, thereby improving the overall performance of the UPS.

4. **Inverter**
- In photovoltaic inverters and wind power inverters, HUFA75631P3-VB can be used in high-frequency inverter modules to help achieve efficient energy conversion and transmission.

This MOSFET has a wide range of applications, especially for module and system designs that have strict requirements on efficiency, reliability and high current capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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