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HUF76639P3-VB Product details

Product introduction:

1. Product Introduction

HUF76639P3-VB is a high-performance single N-channel MOSFET in TO220 package, which is particularly suitable for applications requiring high current and high voltage handling. The maximum drain-source voltage of this MOSFET is 100V, which is suitable for higher voltage circuit design. Its gate-source voltage range is ±20V and the threshold voltage is 1.8V, ensuring efficient operation at low gate drive voltage. HUF76639P3-VB uses Trench technology, with an on-resistance as low as 17mΩ (@ VGS=10V) and supports a maximum drain current of 70A. It performs particularly well in high-power applications, which can significantly reduce power consumption and improve system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 70A 17mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. Detailed parameter description

- **Package type**: TO220
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 17mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation (Pd)**: Approximately 150W
- **Gate charge (Qg)**: Approximately 100nC @ VGS=10V
- **Reverse recovery time (trr)**: Approximately 50ns

Domain and module applications:

3. Application fields and module examples

1. **Power management and converters**: HUF76639P3-VB excels in high voltage DC-DC converters and power management modules with its low on-resistance and high current handling capability. It is suitable for high-efficiency power module design, such as switching power supplies and inverters, and can provide efficient power conversion under high power operation, significantly reducing energy loss.

2. **Motor drive applications**: In the field of motor control, the high current carrying capacity of this MOSFET makes it suitable for motor drives and servo control systems. It can provide stable current control under high load conditions to ensure smooth operation of the motor, especially during the start and stop of high power motors.

3. **Load switch and protection circuit**: HUF76639P3-VB can be used in high voltage and high current load switch applications, such as load switch circuits in battery management systems. Its low on-resistance and high current carrying capacity can effectively reduce power consumption and improve system reliability.

4. **Automotive Electronics and Industrial Control**: In automotive electronics and industrial control applications, this MOSFET can be used to drive high current loads such as lighting systems, electronic pumps, and other demanding power control modules. Its high performance and reliability make it a key component in various power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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