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HUF76633P3_12-VB Product details

Product introduction:

1. HUF76633P3_12-VB Product Introduction

HUF76633P3_12-VB is a single-N-Channel MOSFET in a TO220 package, suitable for high-performance and high-current applications. The device has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V. HUF76633P3_12-VB uses advanced Trench process technology, and the on-resistance (RDS(ON)) is 38mΩ at a 4.5V gate drive and 36mΩ at a 10V gate drive. Its maximum drain current (ID) can reach 55A, which makes this MOSFET very suitable for application scenarios that require high voltage and high current handling capabilities.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 55A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. HUF76633P3_12-VB Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.8V
- **RDS(ON)@VGS=4.5V**: 38mΩ
- **RDS(ON)@VGS=10V**: 36mΩ
- **ID (drain current)**: 55A
- **Technology**: Trench

Domain and module applications:

III. HUF76633P3_12-VB Applications and Module Examples

1. **High-efficiency power management systems**: HUF76633P3_12-VB is ideal for use in switch mode power supplies (SMPS) and DC-DC converters that require high efficiency. Its high current capability and low on-resistance ensure low power loss and high efficiency in high power conversion applications. The device is widely used in applications such as computer power supplies and communication equipment power supplies.

2. **Electric vehicles and hybrid vehicles**: In electric vehicles (EVs) and hybrid vehicles (HEVs), HUF76633P3_12-VB can be used for power management and inverter circuits that drive motors. Its high withstand voltage characteristics and high current handling capabilities make it suitable for use in motor control modules and battery management systems (BMS) to improve system reliability and efficiency.

3. **Industrial control and automation**: In industrial control and automation systems, this MOSFET can be used in high voltage switches and motor drive modules. HUF76633P3_12-VB's high voltage and current handling capabilities make it an excellent choice for industrial power management and device driving, and is suitable for industrial switching power supplies, factory automation equipment, and high-power motor drive systems.

4. **Power Inverter**: HUF76633P3_12-VB is suitable for a variety of power inverter applications, including solar inverters and uninterruptible power supplies (UPS). Its high voltage and high current capabilities can improve the output power and efficiency of the inverter system while maintaining low conduction losses, making it suitable for demanding power conversion and inverter application scenarios.

HUF76633P3_12-VB's high voltage and high current handling capabilities make it an ideal choice for high-performance power electronics applications in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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