Product introduction：
HUF75309P3-VB MOSFET Product Introduction
HUF75309P3-VB is a high-performance single N-channel MOSFET in TO220 package, designed for medium voltage and current applications. This MOSFET has a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 20A, making it suitable for a variety of electronic circuits that require efficient current management. Its low threshold voltage (Vth) of 1.7V, coupled with the application of Trench technology, ensures that the MOSFET can be efficiently turned on at low gate-source voltages, with an on-resistance of 72mΩ (RDS(ON)@VGS=10V), providing excellent power conversion efficiency and thermal management capabilities.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
20A |
|
|
72mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
20A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
20A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
HUF75309P3-VB Detailed parameter description
1. **Package type**: TO220
This package provides good heat dissipation and durability, suitable for high power applications.
2. **Configuration**: Single N-channel
The single N-channel configuration ensures simple circuit design and provides efficient current control.
3. **Drain-source voltage (VDS)**: 60V
Suitable for medium voltage applications and can handle power supply requirements within the common voltage range.
4. **Gate-source voltage (VGS)**: ±20V
The wide gate voltage range increases the flexibility and protection function of the device.
5. **Threshold voltage (Vth)**: 1.7V
The low threshold voltage allows the MOSFET to turn on at a lower gate voltage, enhancing the switching speed and responsiveness.
6. **On-resistance (RDS(ON))**: 72mΩ @ VGS=10V
Low on-resistance reduces power loss, improves overall efficiency and system reliability.
7. **Maximum drain current (ID)**: 20A
Supports currents up to 20A, suitable for applications with medium power requirements.
8. **Technology**: Trench
Trench technology provides low on-resistance and high switching efficiency, improving power management performance and reliability.
Domain and module applications：
Application fields and module examples
1. **DC-DC converter**: The high current and low on-resistance characteristics of HUF75309P3-VB make it very suitable for use in DC-DC converters, which can effectively manage power loss in the power conversion process and improve conversion efficiency.
2. **Motor control**: In motor control circuits, this MOSFET can handle higher current loads, ensure the stability and efficiency of motor drive, and is widely used in power tools and industrial motor control systems.
3. **Power amplifier**: Due to its high current handling capability and low on-resistance, this MOSFET is suitable for power amplifier circuits, which can efficiently process amplified signals and improve system performance.
4. **LED driver**: In LED driver circuits, HUF75309P3-VB can provide efficient current management, ensure stable brightness and long life of LED lamps, and is suitable for various lighting applications.
5. **Power Management**: This MOSFET is also suitable for power management modules, including switching power supplies and protection circuits. Its excellent switching characteristics and low power consumption characteristics can effectively improve the overall performance of the system.
In summary, HUF75309P3-VB MOSFET is widely used in various electronic systems for efficient current control and power management requirements due to its excellent electrical performance and adaptability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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