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HM40N20-VB Product details

Product introduction:

HM40N20-VB MOSFET Product Introduction

HM40N20-VB is a single N-channel MOSFET in TO220 package with a maximum drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V. The MOSFET has a turn-on threshold voltage (Vth) of 3V and uses Trench technology to reduce on-resistance and improve switching performance. At VGS=10V, its on-resistance (RDS(ON)) is 46mΩ and the drain current (ID) can reach 50A. This MOSFET is particularly suitable for applications requiring high current and medium voltage, with excellent switching characteristics and low conduction losses.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 200V 3V 50A 46mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 200V 3V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 200V 3V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
HM40N20-VB MOSFET Detailed parameter description

- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 46mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench
- **Switching characteristics**: Low on-resistance, high current handling capability

Domain and module applications:

HM40N20-VB MOSFET Application Fields and Modules

The design and performance of HM40N20-VB MOSFET make it suitable for a variety of application scenarios that require high current and medium voltage:

1. **Power Management**: In power management circuits, such as DC-DC converters and power switches, the high current handling capability and low on-resistance of HM40N20-VB can provide efficient power conversion and stable current supply. This is especially important for high-power power modules.

2. **Power Amplifier**: In power amplifier design, the low on-resistance and high drain current capability of this MOSFET enable it to operate stably under high current conditions, thereby improving the efficiency and performance of the system.

3. **Motor Drive**: HM40N20-VB can be used in motor drive circuits, such as DC motor control systems. Its high current carrying capacity and low on-resistance help improve the efficiency and response speed of motor drives.

4. **Frequency Converters and Inverters**: In frequency converter and inverter applications, the high current handling capability and medium voltage characteristics of the HM40N20-VB make it suitable for voltage conversion and power regulation, helping to improve the reliability and performance of the equipment.

5. **High Power Switch**: In high power switching circuits, such as the switching control of high power loads, the low on-resistance of the HM40N20-VB can reduce power losses, while its high current capability ensures stable operation of the circuit.

6. **Industrial Power Modules**: This MOSFET can be used in industrial power modules, such as industrial automation equipment and power distribution systems. It can work stably under high current loads and provide reliable power management.

In general, the HM40N20-VB MOSFET, with its excellent current handling capability and low on-resistance, is suitable for a variety of applications requiring high current and medium voltage, providing reliable performance and efficient power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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