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HM3018KR-VB Product details
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HM3018KR-VB MOSFET Product Introduction
HM3018KR-VB is a high-efficiency single N-channel MOSFET in SOT23-3 package, designed for small electronic devices and low-power applications. Its maximum drain-source voltage (VDS) is 60V, and the gate-source voltage (VGS) range is ±20V. The turn-on threshold voltage (Vth) of this MOSFET is 1.7V, the on-resistance (RDS(ON)) is 3100mΩ at VGS=4.5V, 2800mΩ at VGS=10V, and the maximum drain current (ID) is 0.3A. HM3018KR-VB uses Trench technology and is suitable for applications with high power consumption and space requirements.
HM3018KR-VB is a high-efficiency single N-channel MOSFET in SOT23-3 package, designed for small electronic devices and low-power applications. Its maximum drain-source voltage (VDS) is 60V, and the gate-source voltage (VGS) range is ±20V. The turn-on threshold voltage (Vth) of this MOSFET is 1.7V, the on-resistance (RDS(ON)) is 3100mΩ at VGS=4.5V, 2800mΩ at VGS=10V, and the maximum drain current (ID) is 0.3A. HM3018KR-VB uses Trench technology and is suitable for applications with high power consumption and space requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
HM3018KR-VB MOSFET Detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3100mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 2800mΩ @ VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
- **Switching characteristics**: Suitable for switching applications with low power consumption and small devices
- **Package**: SOT23-3, suitable for space-constrained applications
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3100mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 2800mΩ @ VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
- **Switching characteristics**: Suitable for switching applications with low power consumption and small devices
- **Package**: SOT23-3, suitable for space-constrained applications
Domain and module applications：
HM3018KR-VB MOSFET Applicable Fields and Modules
The design characteristics of HM3018KR-VB MOSFET make it widely used in multiple fields and modules:
1. **Portable Electronic Devices**: Due to its compact SOT23-3 package and low power consumption, HM3018KR-VB is suitable for portable electronic devices such as smart phones, portable music players, etc. This MOSFET can effectively control low current loads while saving space.
2. **Consumer Electronics**: In consumer electronics such as home appliances, toys, etc., HM3018KR-VB can be used to achieve efficient switching control. Its low on-resistance helps improve the energy efficiency of the device and reduce power consumption.
3. **Battery Management System**: In the battery management system, this MOSFET can be used as a switch to control the charging and discharging process of the battery. Due to its low power consumption and efficient switching characteristics, it can effectively manage the battery current and improve the overall performance of the system.
4. **Low-power switching circuits**: HM3018KR-VB is very suitable for low-power switching circuits, such as low-power switching power supplies, LED drive circuits, etc. Its low on-resistance and small package make it perform well in these applications, which can effectively reduce power consumption and improve system stability.
5. **Small signal switch**: This MOSFET can also be used in small signal switching applications, such as switch control in signal switching circuits. Its compact package and efficient switching characteristics make it perform well in these applications.
The HM3018KR-VB MOSFET combines a small package with efficient switching performance, making it an ideal choice for a variety of small electronic devices and low-power applications, especially for occasions with space constraints and strict power consumption requirements.
The design characteristics of HM3018KR-VB MOSFET make it widely used in multiple fields and modules:
1. **Portable Electronic Devices**: Due to its compact SOT23-3 package and low power consumption, HM3018KR-VB is suitable for portable electronic devices such as smart phones, portable music players, etc. This MOSFET can effectively control low current loads while saving space.
2. **Consumer Electronics**: In consumer electronics such as home appliances, toys, etc., HM3018KR-VB can be used to achieve efficient switching control. Its low on-resistance helps improve the energy efficiency of the device and reduce power consumption.
3. **Battery Management System**: In the battery management system, this MOSFET can be used as a switch to control the charging and discharging process of the battery. Due to its low power consumption and efficient switching characteristics, it can effectively manage the battery current and improve the overall performance of the system.
4. **Low-power switching circuits**: HM3018KR-VB is very suitable for low-power switching circuits, such as low-power switching power supplies, LED drive circuits, etc. Its low on-resistance and small package make it perform well in these applications, which can effectively reduce power consumption and improve system stability.
5. **Small signal switch**: This MOSFET can also be used in small signal switching applications, such as switch control in signal switching circuits. Its compact package and efficient switching characteristics make it perform well in these applications.
The HM3018KR-VB MOSFET combines a small package with efficient switching performance, making it an ideal choice for a variety of small electronic devices and low-power applications, especially for occasions with space constraints and strict power consumption requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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