Product introduction：
1. HM2301KR-VB Product Introduction
HM2301KR-VB is a high-performance P-type power MOSFET in SC70-3 package, designed for low-voltage applications. The drain-source voltage (VDS) of this MOSFET is -20V, which is suitable for scenarios requiring negative voltage switching. Its gate-source voltage (VGS) range is ±12V, and the threshold voltage (Vth) is -0.6V. It has a low on-resistance of 100mΩ @ VGS = 2.5V and 80mΩ @ VGS = 4.5V, and supports a maximum drain current (ID) of -3.1A. Using Trench technology, this MOSFET provides excellent switching performance and efficient power management, suitable for a variety of low-voltage circuit applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
100mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-3 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-3 |
Single-P |
-20V |
|
-0.6V |
-3.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-3 |
Single-P |
|
|
|
|
|
|
|
2. HM2301KR-VB Detailed parameter description
- **Package type (Package): ** SC70-3
- **Configuration (Configuration): ** Single-P-Channel
- **Drain-source voltage (VDS): ** -20V
- **Gate-source voltage (VGS): ** ±12V
- **Threshold voltage (Vth): ** -0.6V
- **On-resistance (RDS(ON)): **
- 100mΩ @ VGS = 2.5V
- 80mΩ @ VGS = 4.5V
- **Drain current (ID): ** -3.1A
- **Technology type (Technology): ** Trench
Domain and module applications：
3. HM2301KR-VB Application Fields and Module Examples
1. **Portable Electronic Devices:**
The small package and low drain-source voltage of HM2301KR-VB make it very suitable for power switching and power management in portable electronic devices. For example, in smartphones, tablets, and portable Bluetooth speakers, it can be used as a battery switch to control the power on and off, ensuring efficient and reliable battery management of the device.
2. **Low Voltage Power Management:**
In low voltage power management systems, such as DC-DC converters, this MOSFET can be used as a P-type switch to regulate current flow. Its low on-resistance ensures efficient power conversion and is suitable for power modules, regulators, and current control circuits.
3. **Battery Protection Circuits:**
HM2301KR-VB is very suitable for use in battery protection circuits, such as overcurrent protection and overcharge protection circuits. In these applications, the MOSFET's high switching performance and low on-resistance can effectively manage the battery's load, preventing the battery from over-discharging or short-circuiting, thereby extending battery life and improving safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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