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HIRF740-VB Product details

Product introduction:

1. HIRF740-VB Product Introduction

HIRF740-VB is a high-voltage single N-channel MOSFET designed in TO220 package and optimized for high voltage applications. The device has a drain-source voltage (VDS) of 650V, suitable for use in environments requiring high voltage operation. Its gate-source voltage (VGS) range is ±30V and its threshold voltage (Vth) is 3.5V, enabling it to operate stably at relatively low gate voltages. The on-resistance (RDS(ON)) is 420mΩ (at VGS=10V), supporting a continuous drain current (ID) of up to 11A. HIRF740-VB uses SJ_Multi-EPI technology to enhance its electrical characteristics and thermal stability, enabling it to perform well in high voltage and high temperature environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 11A 420mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. HIRF740-VB detailed parameter description

1. **Package type**: TO220
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 420mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 11A
8. **Technology type**: SJ_Multi-EPI
9. **Breakdown voltage (BVDSS)**: 650V
10. **Maximum power dissipation (Ptot)**: 50W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 1200pF
13. **Output capacitance (Coss)**: 150pF
14. **Reverse recovery time (trr)**: 250ns

Domain and module applications:

3. Application fields and modules of HIRF740-VB

HIRF740-VB MOSFET has high voltage tolerance and low on-resistance, suitable for various high voltage electrical applications. The following are some typical application fields and modules of this MOSFET:

1. **High voltage switching power supply**: In high voltage switching power supply, HIRF740-VB can handle voltage up to 650V, suitable for the high voltage end of the power supply, providing efficient switching control and protection for the power supply system.

2. **Motor drive**: Especially suitable for high voltage motor drive systems, such as industrial motor drives and power tools, HIRF740-VB can stably control current at high voltage to support reliable operation of the motor.

3. **Inverter and converter**: Widely used in photovoltaic inverters and DC-AC converters, HIRF740-VB can efficiently handle power conversion and is suitable for high voltage applications such as solar power generation systems and uninterruptible power supplies (UPS).

4. **High-voltage lighting system**: In high-voltage lighting systems such as high-intensity discharge lamps (HID), HIRF740-VB can effectively control large currents to ensure stable operation of lamps.

These features make HIRF740-VB MOSFET perform well in high-voltage power electronic devices, providing a reliable solution for a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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