HAT3021R-VB is a high-performance dual MOSFET with SOP8 package and N-channel and P-channel configurations. This model is designed based on Trench technology to provide high current handling capability and low power consumption. Its maximum drain-source voltage (VDS) is ±80V, the gate-source voltage (VGS) range is ±20V, the turn-on voltage (Vth) of the N-channel MOSFET is 1.8V, and the turn-on voltage (Vth) of the P-channel MOSFET is -1.7V. The on-resistance (RDS(ON)) of the HAT3021R-VB is 59mΩ (N-channel) and 126mΩ (P-channel) at VGS=4.5V, and 46mΩ (N-channel) and 100mΩ (P-channel) at VGS=10V, supporting continuous drain currents (ID) of up to 5.3A and -3.9A, respectively. These features make the HAT3021R-VB suitable for applications that require high current and high voltage handling, providing efficient switching performance and reliable operation.
1. **Package type**: SOP8 - The SOP8 package provides a compact size, suitable for use in space-limited applications, while having good heat dissipation performance to meet high power requirements.
2. **Configuration**: Dual N+P channel - This configuration contains an N-channel MOSFET and a P-channel MOSFET, allowing bidirectional switching operation in the same package, increasing the flexibility of circuit design.
3. **Drain-source voltage (VDS)**: ±80V - The maximum drain-source voltage is ±80V, which can handle positive and negative voltages and is suitable for medium and high voltage applications.
4. **Gate-source voltage (VGS)**: ±20V - Supports a gate-source voltage of ±20V, providing a wide range of drive options, enhancing design flexibility and compatibility.
5. **Throw Voltage(Vth)**: - N-Channel: 1.8V - P-Channel: -1.7V - The N-Channel has a lower turn-on voltage, which is suitable for low voltage drive applications, and the P-Channel turn-on voltage allows efficient operation under negative voltage conditions.
6. **On-Resistance(RDS(ON))**: - N-Channel: - 59mΩ @ VGS=4.5V - 46mΩ @ VGS=10V - P-Channel: - 126mΩ @ VGS=4.5V - 100mΩ @ VGS=10V - Low on-resistance reduces power loss and improves the overall efficiency of the circuit.
7. **Maximum continuous drain current (ID)**: - N-channel: 5.3A - P-channel: -3.9A - Able to handle higher current loads and provide stable performance.
8. **Technology**: Trench - Adopting Trench technology, the conductive performance and switching efficiency of MOSFET are optimized, the switching loss is reduced, and the overall efficiency of the system is improved.
Domain and module applications：
3. Application fields and module examples
1. **DC-DC converter**: - HAT3021R-VB is suitable for DC-DC converters, and its dual MOSFET configuration can effectively control current and improve conversion efficiency. The combination of N-channel and P-channel enables it to handle complex current paths and bidirectional currents, enhancing the flexibility and performance of the converter.
2. **Power management**: - In power management systems, this MOSFET provides high current handling capabilities and low power consumption characteristics. Its dual MOSFET configuration allows fine control of power supply, which is suitable for power switches and protection circuits, improving the overall efficiency and stability of the system.
3. **Motor drive**: - HAT3021R-VB can be used in motor drive applications, especially in scenarios where bidirectional control is required. Its high current capability and low on-resistance help to effectively drive motor loads and provide stable control performance.
4. **Load Switch**: - This MOSFET is suitable for load switching applications, capable of handling higher current loads and providing low-power switching operation. Its dual MOSFET configuration makes load switching more flexible and reliable.
5. **Inverter**: - In the inverter, the dual N+P channel design of the HAT3021R-VB allows the handling of positive and negative currents and improves switching efficiency. Its high current and high voltage handling capabilities make it suitable for switching applications in inverters, optimizing energy conversion and system performance.
The high current handling capability and dual N+P channel configuration of the HAT3021R-VB enable it to perform well in a variety of high current and high voltage applications, making it an ideal choice for improving the efficiency and reliability of electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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