Product introduction：
1. Product Introduction
HAT2024R-VB is a dual N-channel MOSFET in SOP8 package, designed for medium voltage and current applications. The MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) range of ±20V. HAT2024R-VB uses Trench technology to provide a lower on-resistance, with an on-resistance of 26mΩ at a gate drive of 4.5V and 22mΩ at a gate drive of 10V. Its threshold voltage (Vth) is 1.7V, and the maximum continuous drain current (ID) is 6.8A (N1) and 6.0A (N2). This dual-channel structure makes HAT2024R-VB very suitable for dual-way switching and high-efficiency power management applications, such as power switches, drive circuits, and load switch modules.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Model**: HAT2024R-VB
- **Package type**: SOP8
- **Channel type**: Dual N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS=4.5V
- 22mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**:
- N1 channel: 6.8A
- N2 channel: 6.0A
- **Technology type**: Trench
- **Power consumption**: Typically in the 30W range, depending on the heat dissipation conditions.
- **Switching speed**: Suitable for medium frequency switching applications with low switching losses.
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples
**1. Power management module**: HAT2024R-VB is particularly suitable for power management modules due to its dual-channel design and low on-resistance. It can provide efficient power control in power switches and battery management systems, optimize power distribution, and improve system efficiency and stability, especially in applications that require dual-way switches.
**2. Drive circuit**: In electric drive systems, HAT2024R-VB can be used as a drive switch to control motors or other loads. Its dual N-channel design enables it to provide efficient switching performance in drive circuits, suitable for power tools, home appliances, and various industrial automation equipment.
**3. Load switch**: This MOSFET also performs well in load switch applications. Its dual-channel structure allows two independent loads to be controlled simultaneously, suitable for load management in home appliances and consumer electronics, such as power switches and battery protection circuits.
**4. High-efficiency power switch**: The low on-resistance and medium current capability of HAT2024R-VB make it an ideal choice for high-efficiency power switch applications. In power switch applications that require high efficiency and reliability, such as data center power supplies and high-efficiency power modules, this MOSFET can provide stable switching performance and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
