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HAT2022RJ-VB Product details

Product introduction:

HAT2022RJ-VB MOSFET Product Introduction

HAT2022RJ-VB is a unipolar N-channel MOSFET that uses advanced Trench technology and is designed for high-efficiency power switching and management applications. This MOSFET is packaged in a SOP8 package with a maximum drain-source voltage (VDS) of 30V and can handle a continuous drain current (ID) of up to 13A. Its gate threshold voltage (Vth) is 1.7V, which is suitable for operation at a lower gate-source voltage. The low RDS(ON) value of this MOSFET ensures excellent conduction performance, effectively reduces conduction losses and heat, and improves the efficiency of the overall system.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Package:** SOP8
- **Configuration:** Unipolar N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 1.7V
- **RDS(ON) @ VGS=4.5V:** 11mΩ
- **RDS(ON) @ VGS=10V:** 8mΩ
- **Continuous leakage current (ID):** 13A
- **Technology:** Trench

Domain and module applications:

Application Examples

1. **Power Switch:** HAT2022RJ-VB is suitable for high-efficiency power switch applications. Its low RDS(ON) value can significantly reduce power consumption and heat generation during switching, and is suitable for use in power supply units and power management modules to improve the overall efficiency and reliability of the system.

2. **DC-DC Converter:** In the switching part of the DC-DC converter, especially in the buck and boost converters, the excellent switching performance and low on-resistance of HAT2022RJ-VB can improve the power conversion efficiency, and is suitable for computer power supplies, communication equipment and other applications that require high-efficiency power design.

3. **Electric Vehicle (EV) Battery Management:** HAT2022RJ-VB is suitable for use in the battery management system of electric vehicles. Its high current handling capability and low on-resistance can effectively protect the battery, ensure safety during charging and discharging, and improve the reliability of the system.

4. **Load Switch:** In various load switch applications, HAT2022RJ-VB can provide reliable switching performance. It is particularly suitable for home appliances, consumer electronics, and medium-power industrial equipment to ensure high efficiency and stability.

These examples show the wide application of HAT2022RJ-VB MOSFET in power switches, DC-DC converters, battery management, and load switches, demonstrating its significant advantages in high-efficiency and high-power density applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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