Product introduction:
1. Product Introduction of HAT1130R-VB
HAT1130R-VB is a high-efficiency P-channel power MOSFET in SOP8 package, designed for applications requiring negative voltage. It has low on-resistance and excellent switching performance, suitable for various high-efficiency power management and switching control systems. HAT1130R-VB has a maximum drain-source voltage of -30V, a gate-source voltage range of ±20V, and a threshold voltage of -1.7V. Its on-resistance (RDS(ON)) is 24mΩ at VGS=4.5V and 18mΩ at VGS=10V, and can support a continuous drain current of up to -9A. Using Trench technology, this MOSFET provides low conduction loss and fast switching capability, suitable for high-power and high-efficiency electronic applications.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
|
18mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
2. Detailed parameter description of HAT1130R-VB
- **Package type**: SOP8
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 24mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- **Drain current (ID)**: -9A
- **Technology type**: Trench
- **Maximum power dissipation (Pd)**: 1.2W
- **Switching speed**: Fast
- **Junction capacitance (Ciss)**: 1300pF @ VDS=-25V, VGS=0V
- **Reverse recovery time (trr)**: 50ns
- **Operating temperature range**: -55°C to +150°C
Domain and module applications:
3. Application fields and module examples of HAT1130R-VB
The low on-resistance and high current carrying capacity of HAT1130R-VB MOSFET make it very suitable for a variety of high-efficiency electronic systems. The following are some typical application fields and module examples:
1. **Power management system**: In the power management system, HAT1130R-VB can be used as a switching element in a high-efficiency DC-DC converter (DC-DC Converter), optimizing power performance by reducing switching losses and improving conversion efficiency.
2. **Electric vehicle control system**: This MOSFET can be used in the battery management system (BMS) and motor drive control module of electric vehicles to provide stable current support and efficient negative voltage control, thereby improving the overall performance and reliability of electric vehicles.
3. **Switching power supply (SMPS)**: In the negative switching part of the switching power supply, HAT1130R-VB can effectively reduce switching losses and enhance power conversion efficiency, and is suitable for high-power power modules.
4. **Load switch**: HAT1130R-VB is suitable for load switches in applications such as industrial automation and motor drives, providing low on-resistance and high current carrying capacity to ensure stable operation of the equipment.
5. **Power protection circuit**: In the protection circuits of electronic devices, such as overcurrent protection and reverse voltage protection, HAT1130R-VB can effectively prevent power polarity errors or overcurrent conditions to ensure system safety.
These application areas take advantage of the HAT1130R-VB's efficient switching capability and low on-resistance to improve the performance and reliability of electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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