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HAT1048R-VB Product details

Product introduction:

1. Product introduction of HAT1048R-VB

HAT1048R-VB is a high-performance P-channel power MOSFET in SOP8 package. Designed for negative voltage applications, this MOSFET has extremely low on-resistance and high current carrying capacity, making it ideal for high-efficiency power supplies and switching control systems. Its maximum drain-source voltage is -30V, the gate-source voltage range is ±20V, and the threshold voltage is -3V. The on-resistance (RDS(ON)) of HAT1048R-VB is 8mΩ at VGS=4.5V and 5mΩ at VGS=10V, supporting a continuous drain current of up to -18A. Using Trench technology, it provides excellent switching performance and low conduction loss, and is suitable for application scenarios requiring high current and low loss.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-P -30V -3V -18A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-P -30V -3V -18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-P -30V -3V -18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-P
2. Detailed parameter description of HAT1048R-VB

- **Package type**: SOP8
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: -18A
- **Technology type**: Trench
- **Maximum power dissipation (Pd)**: 1.5W
- **Switching speed**: Fast
- **Junction capacitance (Ciss)**: 1600pF @ VDS=-25V, VGS=0V
- **Reverse recovery time (trr)**: 40ns
- **Operating temperature range**: -55°C to +150°C

Domain and module applications:

3. Application fields and module examples of HAT1048R-VB

The high current carrying capacity and extremely low on-resistance of HAT1048R-VB MOSFET make it perform well in a variety of high-performance electronic devices. The following are some typical application fields and module examples:

1. **Power management system**: In the power management system, HAT1048R-VB can be used in high-efficiency DC-DC converters (DC-DC Converters) and power protection circuits to achieve low-loss switch control and improve the overall efficiency of the system.

2. **Electric vehicle power module**: In electric vehicles, this MOSFET is suitable for battery management systems (BMS) and motor drive control, improving the performance and reliability of electric vehicles by providing stable current support and efficient negative voltage control.

3. **High-efficiency switching power supply (SMPS)**: In the negative switching part of the switching power supply, HAT1048R-VB can effectively reduce switching losses and improve power conversion efficiency, and is suitable for various high-power power modules.

4. **Load switch**: In applications such as industrial automation and motor drives, this MOSFET can be used as a load switch to provide low on-resistance and high current carrying capacity, ensuring efficient and stable operation of the equipment.

5. **Protection circuit**: HAT1048R-VB is also suitable for protection circuits in electronic devices, such as overcurrent protection and reverse voltage protection, to prevent damage to the system caused by incorrect power polarity or overcurrent conditions.

Through its application in these fields, HAT1048R-VB can significantly improve the performance and reliability of electronic systems and meet the design requirements of high efficiency and low loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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