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HAT1020RJ-VB Product details

Product introduction:

HAT1020RJ-VB MOSFET Product Introduction

HAT1020RJ-VB is a unipolar P-channel MOSFET that uses advanced Trench technology and is designed for high-efficiency power management and switching applications. This MOSFET is packaged in a SOP8 package, has a maximum drain-source voltage (VDS) of -30V, and can withstand a continuous leakage current (ID) of up to -5.8A. Its gate threshold voltage (Vth) is -1.7V, ensuring effective driving at low voltage. Its low RDS(ON) value provides excellent conduction performance, thereby reducing power loss and heat, and is suitable for a variety of high-efficiency switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-P -30V -1.7V -5.8A 33mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-P -30V -1.7V -5.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-P -30V -1.7V -5.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-P
Detailed parameter description

- **Package:** SOP8
- **Configuration:** Unipolar P-channel
- **Drain-source voltage (VDS):** -30V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** -1.7V
- **RDS(ON) @ VGS=4.5V:** 56mΩ
- **RDS(ON) @ VGS=10V:** 33mΩ
- **Continuous leakage current (ID):** -5.8A
- **Technology:** Trench

Domain and module applications:

Application Examples

1. **Load Switch:** The HAT1020RJ-VB is suitable for load switch applications, especially in portable devices and consumer electronics. Its low RDS(ON) value helps reduce power consumption and heat during switching, improving overall system energy efficiency.

2. **Power Management:** In power management systems, such as battery management and power switching, the HAT1020RJ-VB is able to effectively control the on and off of power. Its low on-resistance and high current handling capability make it an ideal choice for power modules.

3. **Electric Vehicle (EV) Battery Protection:** In the battery protection system of electric vehicles, this MOSFET can be used to ensure the safety of the battery during charging and discharging. Its low RDS(ON) and high withstand voltage capability help protect the battery and improve system reliability.

4. **High-Efficiency DC-DC Converter:** This MOSFET is also well suited for use in DC-DC converters, especially in the switch section of buck and boost converters. Its excellent switching performance and low power consumption can significantly improve the efficiency of power conversion and is suitable for computer power supplies and other high-efficiency power supply designs.

These examples demonstrate the flexibility and efficiency of the HAT1020RJ-VB MOSFET in a variety of application scenarios, indicating its wide applicability in power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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