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H8N0801AB-VB Product details

Product introduction:

H8N0801AB-VB Product Introduction

The H8N0801AB-VB is a high-performance unipolar N-channel MOSFET in a TO220 package with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V, suitable for a variety of high-efficiency power management and switching applications. The device uses advanced trench technology (Trench), which can reduce the on-resistance (RDS(ON)) while increasing the on-current, thereby achieving higher efficiency and lower power consumption. The threshold voltage (Vth) of this MOSFET is 1.8V, and it can withstand a maximum current of 55A, making it an excellent performer in high-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 55A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
H8N0801AB-VB Detailed parameter description

- **Package type**: TO220
- **Channel configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 38mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
- **Maximum drain current (ID)**: 55A
- **Technology**: Trench (trench technology)

Domain and module applications:

Applications and modules

H8N0801AB-VB MOSFET is widely used in many fields and modules, mainly including:

1. **Power management module**: Due to its low on-resistance and high current handling capability, this MOSFET is very suitable for switching power supplies (SMPS) and DC-DC converters, which can improve system efficiency and reduce heat loss.

2. **Motor control**: In motor control applications in industrial and consumer electronics, H8N0801AB-VB can effectively manage the starting current and operating status of the motor to ensure system stability and efficiency.

3. **Uninterruptible power supply (UPS)**: Due to its high voltage resistance and high current capability, this MOSFET is suitable for inverter and regulator modules in UPS systems to help improve system reliability.

4. **Electric Vehicle (EV) Charging System**: In the high-power charging module of the electric vehicle charging station, the high performance of H8N0801AB-VB can help improve the charging speed and reduce the energy loss of the system.

Through these application examples, H8N0801AB-VB demonstrates its wide applicability in the fields of high performance and high reliability, and is an ideal choice for various systems that require high-power switching and current management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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