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H7N0203AB-VB Product details

Product introduction:

1. H7N0203AB-VB Product Introduction

H7N0203AB-VB is a high-efficiency single-N-Channel MOSFET in a TO220 package, designed for low-voltage, high-current applications. The device has a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) range of 0.5V to 1.5V. Its low on-resistance (RDS(ON)) ensures efficient power transmission, which is 5mΩ at VGS of 2.5V and 4mΩ at VGS of 4.5V, and the maximum drain current (ID) is 100A. This makes the H7N0203AB-VB particularly suitable for power management and switching applications that require high efficiency and low loss.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 20V 0.5~1.5V 100A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. H7N0203AB-VB Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS=2.5V
- 4mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology

Domain and module applications:

3. Application fields and module examples

The low on-resistance and high current capability of H7N0203AB-VB MOSFET make it excel in low voltage, high current applications. The following are some typical application fields and modules:

1. **Power tools**:
H7N0203AB-VB is very suitable for power management and drive circuits of power tools. Its low on-resistance and high current handling capability ensure the high efficiency and reliability of power tools, and can meet the needs of fast startup and high power output.

2. **Low voltage DC-DC converter**:
In low voltage DC-DC converters, H7N0203AB-VB is the main switching element, providing low loss and high efficiency power conversion. Its low VDS and low RDS(ON) characteristics ensure the high efficiency and low heat loss of the converter, which is suitable for mobile devices and portable power modules.

3. **Battery Management System**:
The device is also suitable for battery management systems (BMS), especially in scenarios that require low voltage, high current handling. The low on-resistance of the H7N0203AB-VB helps improve the energy efficiency of the system, extend the battery life, and reduce system heating.

4. **Automotive Electronics**:
The H7N0203AB-VB can be used for low-voltage power switching and current control in automotive electronic equipment, such as power seat adjustment, power windows, fans, and lighting control. Its high current capability and low loss characteristics help improve system reliability and energy efficiency.

Through these application scenarios, the H7N0203AB-VB MOSFET provides excellent performance in low voltage, high current applications, suitable for a variety of power management and switching modules that require high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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