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H2N7002K-VB Product details

Product introduction:

H2N7002K-VB MOSFET Product Introduction

The H2N7002K-VB is a single N-channel MOSFET in a compact SOT23-3 package. Designed for low voltage applications, this MOSFET features high switching efficiency and stable performance. Its Trench technology design ensures low on-resistance and excellent switching characteristics. Although its maximum drain current is 0.3A, it exhibits lower on-resistance at higher gate-source voltages (V_GS), making it ideal for applications that require efficient switching and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 20(±V) 1.7V 0.3A 2800mΩ
Detailed parameter description

- **Model**: H2N7002K-VB
- **Package**: SOT23-3
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(V_DS)**: 60V
- **Gate-Source Voltage(V_GS)**: ±20V
- **Threshold Voltage(V_th)**: 1.7V
- **On-Resistance(R_DS(ON))**:
- 3100mΩ @ V_GS = 4.5V
- 2800mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 0.3A
- **Technology**: Trench

Domain and module applications:

Applications and Module Examples

The design features of the H2N7002K-VB MOSFET make it suitable for a variety of low voltage and small switching applications:

1. **Portable Electronics**: Due to its compact SOT23-3 package and low power consumption, the H2N7002K-VB is suitable for portable electronic devices such as smartphones, tablets and wearable devices. This MOSFET can effectively control power management and load switching, optimizing the energy efficiency and endurance of the device.

2. **Low Power Switch**: The low on-resistance of the H2N7002K-VB makes it suitable for low power switching applications such as small power switches and load switches. In these applications, the MOSFET is able to provide efficient switching operation while reducing power consumption and heat generation.

3. **Battery-Powered Systems**: In battery-powered systems such as portable power modules and battery management systems, the H2N7002K-VB can be used as a switching element to help achieve efficient battery management and power control. Its efficient switching characteristics help extend battery life and improve system reliability.

4. **Small Power Management**: In small power management modules, the H2N7002K-VB can be used to implement precise current control and switching functions. This MOSFET is suitable for low current applications and can provide stable performance in a compact space.

These features make the H2N7002K-VB an ideal switch choice for small electronic devices and low power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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