Product introduction：
GT4503-VB MOSFET Product Introduction
**GT4503-VB** is a dual-channel MOSFET that integrates N-Channel and P-Channel MOSFETs, and the package type is SOP8. This MOSFET uses advanced Trench technology and is designed to provide efficient switching performance and low on-resistance. Its main parameters include maximum drain-source voltage ±30V, gate-source voltage range ±20V, N-Channel threshold voltage of 1.6V, and P-Channel threshold voltage of -1.7V. The on-resistance is 24mΩ (N-Channel) and 50mΩ (P-Channel) at VGS=4.5V, 18mΩ (N-Channel) and 40mΩ (P-Channel) at VGS=10V, and the maximum drain current is ±8A. This MOSFET is suitable for bipolar power supplies and high-efficiency switching applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Dual (N-Channel + P-Channel)
- **Maximum drain-source voltage (VDS)**: ±30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-Channel: 1.6V
- P-Channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-Channel:
- 24mΩ @ VGS = 4.5V
- 18mΩ @ VGS = 10V
- P-Channel:
- 50mΩ @ VGS = 4.5V
- 40mΩ @ VGS = 10V
- **Maximum drain current (ID)**: ±8A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
1. **Power Management**:
The dual-channel design of GT4503-VB makes it ideal for power management applications. In DC-DC converters and power modules, N-Channel and P-Channel MOSFETs can work together to achieve efficient current switching and power conversion, optimizing overall power efficiency.
2. **H-bridge circuit**:
In the H-bridge circuit, the N-Channel and P-Channel MOSFETs of GT4503-VB can achieve forward and reverse control of the motor. Its bipolar voltage and high current handling capabilities make it excel in motor drive systems and suitable for motor drives and intelligent control systems.
3. **Load Switch**:
Due to its low on-resistance and high current handling capabilities, this MOSFET is suitable for load switching applications. In load switch modules that require efficient switching control, such as electronic switches and relay drivers, GT4503-VB is able to provide stable performance.
4. **High-efficiency switching circuit**:
GT4503-VB can be used in a variety of high-efficiency switching circuits, including switching power supplies and switching regulators. Its low RDS(ON) value and high current capability enable it to reduce switching losses and improve the overall efficiency of the circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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