Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
|
33mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package type**: SOP8
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 56mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Drain current (ID)**: -5.8A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and module examples:
1. **Power switch**:
In power management and switching applications, FY3ABJ-03-VB can be used as an efficient load switch. Its low on-resistance and moderate current carrying capacity make it suitable for efficient power switches, protection circuits and power distribution applications. It is particularly suitable for load switches and power switches in battery management systems, which can effectively reduce power consumption and improve the overall efficiency of the system.
2. **Inverter**:
In inverter circuits, FY3ABJ-03-VB can be used as a P-Channel MOSFET to control current direction and switching. Its excellent conduction performance and low on-resistance enable it to effectively control current flow and improve the working efficiency of the inverter. Suitable for solar inverters and other types of inverter designs.
3. **High-side switch**:
FY3ABJ-03-VB can be used as a high-side switch in various power management circuits. Due to its P-Channel configuration, it performs well in high-side switch applications. Suitable for high-side load switches, battery protection circuits and load control, it can efficiently manage current flow and reduce switching losses.
4. **Automotive Electronics**:
In automotive electronic systems, FY3ABJ-03-VB can be used for high-side switch control, such as power windows, light control, etc. Its low on-resistance and high switching efficiency ensure the stability and reliability of automotive systems and improve the operating performance of automotive electronic components.
5. **Load Protection**:
FY3ABJ-03-VB can be used in load protection circuits, such as overcurrent protection and overvoltage protection. Its excellent switching performance and low on-resistance enable it to respond quickly to overload conditions and protect other circuits from damage. Suitable for various protection circuit designs, including battery protection, power protection and device protection.
FY3ABJ-03-VB MOSFET, with its excellent switching performance and low on-resistance, provides efficient and reliable solutions in the fields of power switches, inverters, high-side switches, automotive electronics and load protection, and supports current management and protection in various application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
