Product introduction：
1. FW306-TL-E-VB Product Introduction
FW306-TL-E-VB is a dual N+P channel MOSFET packaged in SOP8, suitable for applications requiring efficient, bidirectional current control. Its design supports a drain-source voltage (VDS) of ±30V and a gate-source voltage (VGS) of ±20V. This MOSFET has N-channel and P-channel configurations, providing threshold voltages (Vth) of 1.6V and -1.7V, respectively, enabling good switching performance at lower drive voltages. FW306-TL-E-VB uses Trench technology to provide excellent on-resistance performance, with the on-resistance of the N-channel and P-channel being 24mΩ and 50mΩ, respectively, at a VGS of 4.5V, and 18mΩ and 40mΩ, respectively, at a VGS of 10V. Its maximum drain current is ±8A, which is suitable for applications requiring bidirectional current control.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
2. Detailed parameter description of FW306-TL-E-VB
- **Package type**: SOP8
- **Configuration**: Dual N+P channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.6V
- P channel: -1.7V
- **On-resistance (RDS(ON)）**:
- N channel:
- 24mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- P channel:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Drain current (ID)**: ±8A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
FW306-TL-E-VB MOSFET plays an important role in a variety of applications due to its dual N+P configuration, low on-resistance and wide range of voltage characteristics. The following are several typical application areas:
1. **H-bridge motor drive**:
- In the H-bridge motor drive circuit, FW306-TL-E-VB can be used as a switching element to control the direction and speed of the motor. Its dual N+P channel configuration allows the motor to be driven forward and reverse, while the low on-resistance helps reduce power consumption and improve drive efficiency.
2. **DC-DC converter**:
- In the DC-DC converter, FW306-TL-E-VB can be used as a synchronous rectifier or switching device. Its low RDS(ON) characteristics reduce power loss, improve conversion efficiency, and make the power supply more stable and efficient.
3. **Battery protection circuit**:
- This MOSFET can effectively control the bidirectional flow of current in the battery protection circuit to ensure safety during charging and discharging. Its bidirectional current control characteristics are suitable for battery overcharge and over-discharge protection to avoid battery damage.
4. **Switching power supply**:
- In switching power supply design, FW306-TL-E-VB MOSFET can be used in high-frequency switching applications. Its low on-resistance and high current capability enable it to handle high-power loads and improve the overall efficiency and reliability of the power supply.
5. **High-efficiency current control module**:
- In modules that require precise current control, such as power management systems and load switches, the dual N+P configuration of FW306-TL-E-VB provides flexible current path control and efficient switching performance, suitable for a variety of high-performance electronic devices.
FW306-TL-E-VB meets a variety of application scenarios that require bidirectional current control through its low on-resistance and dual N+P configuration, especially in the fields of motor drive, battery protection, switching power supply, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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