Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
55A |
|
|
36mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
55A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
55A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO220
- The TO220 package provides good heat dissipation and high mechanical strength, suitable for applications requiring higher power handling.
2. **Configuration**: Single-channel N-type
- Single-channel N-type MOSFET is designed for a wide range of switching and amplification applications.
3. **Drain-source voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, enabling it to handle higher voltage circuits.
4. **Gate-source voltage (VGS)**: ±20V
- The gate-to-source voltage range is ±20V, providing sufficient control voltage range.
5. **Threshold voltage (Vth)**: 1.8V
- The lower threshold voltage allows this MOSFET to be turned on at a lower drive voltage, suitable for low voltage control circuits.
6. **On-resistance (RDS(ON))**:
- 38mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
- Low on-resistance helps reduce power consumption and heat loss, and improves efficiency.
7. **Drain current (ID)**: 55A
- The maximum drain current is 55A, suitable for applications that need to handle larger currents.
8. **Technology**: Trench
- Using Trench technology, it provides excellent switching performance and low on-resistance, improving the overall performance and reliability of the device.
Domain and module applications：
Applicable fields and modules
1. **Power management**: In power management systems, FTP540A-VB can be used as a switching element to handle higher current power conversion and management, suitable for high current power modules such as power adapters and DC-DC converters.
2. **Power amplifier**: In power amplifier circuits, FTP540A-VB can be used to handle high power signals, and its high current carrying capacity and low on-resistance make it an ideal choice for high-efficiency amplifiers.
3. **Motor control**: This MOSFET is suitable for motor drive circuits, especially in applications that require high current and high efficiency, such as industrial motor drives, power tools, and home appliance control systems.
4. **Inverter**: In solar inverters and other high-power inverter circuits, FTP540A-VB as a switching element can provide stable performance, handle high current and high voltage, and ensure high efficiency of the inverter.
5. **Current Protection**: Due to its high current carrying capability and low power consumption, the FTP540A-VB can be used in current protection circuits to help protect other circuit components from excessive current.
This MOSFET is suitable for a variety of applications that require efficient current control due to its high current handling capability and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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