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FSS162-TL-E-VB Product details

Product introduction:

Product Introduction

**FSS162-TL-E-VB** is a high-performance single-channel P-channel MOSFET packaged in SOP8 and using Trench technology. This MOSFET is designed to handle loads with a maximum drain-source voltage of -30V and can support a leakage current of up to -9A. Its on-resistance performance at different gate-source voltages is excellent, 24mΩ at VGS=4.5V and 18mΩ at VGS=10V. This makes the FSS162-TL-E-VB very suitable for applications requiring efficient switching and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-P -30V -1.7V -9A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-P -30V -1.7V -9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-P -30V -1.7V -9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-P
Detailed parameter description

- **Model**: FSS162-TL-E-VB
- **Package**: SOP8
- **Configuration**: Single-channel P-channel MOSFET
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 24mΩ (VGS=4.5V)
- 18mΩ (VGS=10V)
- **Maximum leakage current (ID)**: -9A
- **Technology**: Trench technology

Domain and module applications:

Applications and module examples

1. **Low voltage load switch**:
FSS162-TL-E-VB is suitable for low voltage load switch applications. Its low on-resistance and high current capability ensure efficient switching operation, which can effectively reduce energy loss and improve the overall performance of the circuit. It is commonly used in power management and load switch systems.

2. **Power management system**:
In the power management system, FSS162-TL-E-VB can be used as a power switch or protection switch. Its low on-resistance and good switching performance make it excellent in applications that require efficient control of power flow, which can improve the efficiency and reliability of the system.

3. **Battery protection circuit**:
This MOSFET is suitable for switching applications in battery protection circuits. Its negative drain-source voltage capability and low on-resistance can effectively protect the battery from overcurrent and overvoltage damage, thereby extending battery life and improving system safety.

4. **DC-DC Converter**:
In DC-DC converters, the high current handling capability and low on-resistance of FSS162-TL-E-VB make it an ideal switching component. It can improve conversion efficiency and reduce power consumption, and is suitable for high-efficiency power conversion occasions.

5. **Power Management Module**:
In power management modules, FSS162-TL-E-VB can be used as a switching element to help manage and distribute power. Its excellent switching characteristics and low power consumption make it suitable for a variety of power management applications that require high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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