Detailed parameter description

1. **Package:** TO-220
- The TO-220 package provides excellent heat dissipation and mechanical strength, suitable for medium to high power applications, ensuring that the MOSFET can operate stably under high power conditions.

2. **Configuration:** Single N-channel
- As an N-channel MOSFET, the FQP9N90C-VB uses electrons as the main charge carrier, suitable for negative voltage switching and control applications.

3. **VDS (Drain-Source Voltage):** 900V
- The maximum voltage between the drain and source is 900V, enabling it to handle high voltage loads and suitable for high voltage switching applications.

4. **VGS (Gate-Source Voltage):** ±30V
- The maximum voltage between the gate and source is ±30V, supporting a large gate drive voltage range to ensure stable operation of the MOSFET under various control conditions.

5. **Vth (Gate Threshold Voltage):** 3.5V
- The gate voltage that makes the MOSFET start to conduct is 3.5V, which is suitable for the control requirements of low gate drive voltage.

6. **RDS(ON) (On-resistance):**
- 950mΩ @ VGS=10V
- The on-resistance is 950mΩ under high gate drive voltage, providing relatively low conduction loss.

7. **ID (Drain Current):** 7A
- The maximum continuous drain current that can be handled is 7A, suitable for medium current applications.

8. **Technology:** SJ_Multi-EPI
- SJ_Multi-EPI technology provides high voltage withstand capability and low on-resistance, suitable for high voltage and high power applications.