Featured Model

Your present location > Home page > Featured Model

FQP22N30-VB Product details

Product introduction:

FQP22N30-VB Product Introduction

**FQP22N30-VB** is a high voltage N-Channel MOSFET in TO220 package. It is designed for high voltage and high current applications, with high drain-source voltage and excellent switching characteristics. This MOSFET uses SJ_Multi-EPI technology, which provides high withstand voltage and low on-resistance, making it stable in high voltage environments. Its high current carrying capacity and low RDS(ON) characteristics make it an ideal choice for a variety of high-efficiency power management and switching applications.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 500V 3.5V 30A 140mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 500V 3.5V 30A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 500V 3.5V 30A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 30A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and module examples

**1. High-voltage switch **

FQP22N30-VB is particularly suitable for high-voltage switch applications, such as switching power supplies in power transmission and industrial equipment. Its high drain-source voltage of up to 500V and low on-resistance ensure reliable operation in high-voltage environments, effectively reducing power consumption and heat generation.

**2. Power management **

In power management systems, such as high-voltage DC-DC converters, the high voltage carrying capacity and low on-resistance of FQP22N30-VB enable it to provide stable performance during high-efficiency power conversion. It is suitable for applications requiring strict power regulation and voltage regulation, which can improve system efficiency and reduce energy loss.

**3. Inverter **

In inverter applications, such as solar inverters and wind power generation systems, the high withstand voltage characteristics of FQP22N30-VB enable it to handle the conversion of high-voltage DC power. Its low RDS(ON) and high current carrying capacity ensure the reliability and efficiency of the inverter when operating at high power.

**4. High power circuits**

This MOSFET is also suitable for various high power circuits, such as high power amplifiers and motor drive systems. Its high voltage and high current capabilities ensure stable performance under high load conditions while reducing power losses.

These application examples demonstrate the excellent performance of FQP22N30-VB in high voltage and high current environments, making it widely used in fields such as efficient power management, high power applications and inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat